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Product Detailed Parameters
- Description：SICFET N-CH 900V 35A D2PAK-7
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：78mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id：3.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：660 pF @ 600 V
- FET Feature：-
- Power Dissipation (Max)：113W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Overview
The Wolfspeed C3M0065090J is a third-generation Silicon Carbide (SiC) N-Channel Enhancement Mode MOSFET housed in a TO-263-7 package. It features a 900V drain-source voltage rating and a maximum continuous drain current of 35A at 25°C case temperature. The device exhibits a typical on-resistance of 65mΩ and a total gate charge of 30nC. Key electrical parameters include a breakdown voltage of 900V, a maximum power dissipation of 113W, and an operating junction temperature range from -55°C to +150°C.
Feature Summary
- New low impedance package with a dedicated driver source pin
- High blocking voltage combined with low on-resistance
- Fast intrinsic diode with low reverse recovery characteristics
- Wide creepage distance between drain and source
Applications
- Renewable energy systems
- EV battery chargers
- High voltage DC/DC converters
- Switch Mode Power Supplies
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging format. The datasheet specifies the standard TO-263-7 package; ensure any reel or tape-and-reel variants match the required manufacturing process. Confirm RoHS compliance status directly with the manufacturer for regulatory adherence.
Selection Notes
Select this component for applications requiring high switching frequencies and reduced system size. The Kelvin source pin facilitates lower inductance driving, minimizing gate ringing. Evaluate thermal management requirements based on the 113W power dissipation limit and the 1.1°C/W junction-to-case thermal resistance.
Part Context
This part belongs to the C3M series of Silicon Carbide MOSFETs from Wolfspeed. It represents the third generation of their SiC technology, designed to improve upon previous iterations by offering enhanced switching performance and lower parasitic capacitances within industry-standard surface mount packages.
Replacement Considerations
Direct replacements must match the 900V rating, TO-263-7 footprint, and similar Rds(on) specifications. Verify that alternative devices support the required 15V operational gate voltage and possess comparable avalanche energy ratings for hard-switching topologies.
