C3M0065100J-TR

$19.82

Description：SICFET N-CH 1000V 35A TO263-7
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:12193d2d1c9e Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1000V 35A TO263-7
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：660 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：113.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Download product information

C3M0065100J-TR

Overview

The Wolfspeed C3M0065100J-TR is an N-channel enhancement mode Silicon Carbide MOSFET in a TO-263-7 package. It features a 1000 V drain-source voltage and a maximum on-resistance of 78 mΩ at 25°C. The device supports a continuous drain current of 32 A and a pulsed current of 90 A. Key electrical parameters include a gate threshold voltage ranging from 1.8 V to 3.5 V, total gate charge of 32 nC, and output capacitance of 70 pF. Thermal characteristics specify a junction-to-case resistance of 1.1 °C/W with an operating temperature range of -55°C to +150°C.

Feature Summary

Utilizes C3M SiC MOSFET technology for high blocking voltage and low on-resistance.
Features a separate Kelvin source pin to minimize parasitic inductance and reduce gate ringing.
Incorporates a fast intrinsic diode with low reverse recovery charge.
Provides 7mm of creepage distance between the drain and source terminals.

Applications

Renewable energy systems
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies

Procurement Notes

Verify that the ordering suffix '-TR' corresponds to tape-and-reel packaging rather than tube packaging when sourcing components. Confirm RoHS compliance status and REACH SVHC declarations directly with the manufacturer or authorized distributors prior to procurement. Ensure the specific revision date matches project requirements as datasheets are subject to change without notice.

Selection Notes

Select this component for applications requiring high-voltage switching with minimized conduction losses. The separate driver source pin facilitates precise gate control to reduce switching transients. Evaluate thermal management strategies based on the specified junction-to-case resistance and derating curves to maintain operation within the 150°C junction temperature limit under varying load conditions.

Part Context

This part belongs to the C3M series of Silicon Carbide power MOSFETs manufactured by Wolfspeed. The TO-263-7 package provides a surface-mount form factor suitable for automated assembly. The device represents a third-generation SiC technology designed to improve system efficiency and power density compared to traditional silicon alternatives.

Replacement Considerations

Cross-reference with other C3M0065100 variants such as the non-trailing version for packaging differences. Verify pinout compatibility and thermal resistance specifications before substituting with similar 1000V SiC MOSFETs from other manufacturers.

FAQ

What is the purpose of Pin 2 in the TO-263-7 package?

Pin 2 serves as the Kelvin source (driver source) connection, which is separated from the main power source pins to minimize parasitic inductance and improve switching performance.