C3M0065100K

$19.75

Description：SICFET N-CH 1000V 35A TO247-4L
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:cef86bef3655 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1000V 35A TO247-4L
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：660 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：113.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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C3M0065100K

Overview

The Wolfspeed C3M0065100K is a silicon carbide (SiC) N-channel enhancement mode MOSFET utilizing C3M technology. It features a TO-247-4L package with an optimized layout including a separate driver source pin to minimize inductance. Key electrical parameters include a drain-source voltage of 1000 V, a maximum continuous drain current of 32 A at 25°C case temperature, and a typical on-resistance of 65 mΩ. The device supports a junction temperature range from -55°C to +150°C.

Feature Summary

Optimized package design with a dedicated driver source pin to reduce switching losses and gate ringing.
High blocking voltage combined with low on-resistance for improved system efficiency.
Fast intrinsic diode characteristics with low reverse recovery charge.
Enhanced creepage distance between drain and source for high-voltage isolation.

Applications

Renewable energy systems
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies

Procurement Notes

Verify the specific ordering suffix 'K' against the manufacturer's official documentation to confirm the exact package variant and compliance status. Ensure that the procurement specifications align with the required thermal management capabilities and voltage ratings defined in the datasheet before finalizing orders.

Selection Notes

Select this component for applications requiring high-voltage operation up to 1000 V and efficient power conversion. The separate driver source pin makes it suitable for designs prioritizing reduced switching losses. Evaluate the thermal resistance and current derating curves to ensure the cooling solution meets the operational requirements within the specified junction temperature limits.

Part Context

This part belongs to the Wolfspeed C3M family of silicon carbide power MOSFETs. These devices are engineered to replace traditional silicon components in high-performance power electronics, offering superior thermal conductivity and higher switching frequencies. The TO-247-4L package provides robust mechanical mounting and electrical isolation.

Replacement Considerations

Direct replacements must match the 1000 V rating, TO-247-4L package, and similar Rds(on) values. Verify pinout compatibility, specifically the separation of the driver source pin, to ensure correct circuit integration without redesigning the PCB layout.

FAQ

What is the purpose of the separate driver source pin?

The separate driver source pin reduces parasitic inductance in the gate drive loop, which minimizes switching losses and prevents gate ringing during high-speed operation.