C3M0075120D-A

$15.54

Description：75M 1200V 175C SIC FET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:df26f7bdf881 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：75M 1200V 175C SIC FET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：3.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：54 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1390 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：136W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Download product information

C3M0075120D-A

Overview

The C3M0075120D-A is a Wolfspeed C3M SiC MOSFET in a TO-247-3 package. It features a 1200 V drain-source voltage and a typical on-resistance of 75 mΩ at 25°C. The device supports a continuous drain current of 32 A at 25°C case temperature and up to 23 A at 100°C. Key electrical parameters include a gate threshold voltage of 2.5 V, total gate charge of 54 nC, and input capacitance of 1390 pF. Thermal characteristics specify a junction-to-case resistance of 0.97°C/W. Switching performance includes turn-on delay of 56 ns, rise time of 17 ns, turn-off delay of 32 ns, and fall time of 13 ns.

Feature Summary

Utilizes Wolfspeed C3M silicon carbide technology for high blocking voltage and low on-resistance.
Features fast intrinsic diode with low reverse recovery charge and high speed switching capabilities.
Designed for enhanced system efficiency, increased power density, and higher switching frequencies.

Applications

Renewable energy systems
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies

Procurement Notes

Verify the specific ordering suffix '-A' against the manufacturer's official documentation to confirm the exact datasheet revision and package marking. Confirm RoHS compliance status and REACH SVHC declarations directly with the supplier or manufacturer before procurement. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions.

Selection Notes

Select this component for applications requiring high-voltage operation with low conduction losses. Evaluate the thermal derating curves to ensure continuous drain current ratings are met at the intended case temperatures. Consider the gate charge and switching energy parameters when designing driver circuits to optimize switching frequency and minimize switching losses.

Part Context

This part belongs to the Wolfspeed C3M series of silicon carbide MOSFETs. It is an N-channel enhancement mode device designed for high-performance power conversion. The TO-247-3 package facilitates through-hole mounting, suitable for industrial and automotive-grade power modules where robust thermal dissipation is required.

Replacement Considerations

Consult official Wolfspeed documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical parameters such as breakdown voltage, on-resistance, and package type.