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Product Detailed Parameters
- Description：SICFET N-CH 1200V 30A TO247-3
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：90mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id：4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：54 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：113.6W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The C3M0075120D is a Wolfspeed Silicon Carbide (SiC) MOSFET utilizing C3M technology. It features an N-Channel Enhancement Mode configuration in a TO-247-3 package. Key electrical parameters include a Drain-Source Voltage of 1200 V, a maximum Gate-Source Voltage of +19 V, and a typical On-State Resistance of 75 mΩ at 25°C. The device supports a continuous drain current of 32 A and a pulsed drain current of 123 A. Operating junction temperatures range from -55°C to +150°C.
Feature Summary
- High blocking voltage combined with low on-resistance for improved efficiency
- Fast intrinsic diode with low reverse recovery characteristics
- High-speed switching capability supported by low capacitances
Applications
- Renewable energy systems
- EV battery chargers
- High voltage DC/DC converters
- Switch Mode Power Supplies
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the TO-247-3 package dimensions align with the target PCB footprint requirements. Ensure gate drive voltages remain within the specified operational limits to maintain device reliability and performance standards.
Selection Notes
Select this component for applications requiring high-voltage handling and efficient thermal management. Evaluate the thermal resistance characteristics against the expected power dissipation levels. Consider the switching speed capabilities when designing gate driver circuits to optimize system performance and minimize electromagnetic interference effects.
Part Context
This part belongs to the Wolfspeed C3M series of silicon carbide power MOSFETs. These devices are engineered to replace traditional silicon counterparts in high-power applications. The series offers enhanced performance metrics including higher breakdown voltages and superior thermal conductivity compared to standard silicon technologies.
Replacement Considerations
Direct substitutes require matching the 1200V rating, TO-247-3 package, and comparable Rds(on). Verify pinout compatibility and thermal characteristics. Cross-reference with Wolfspeed's updated product portfolio for newer generation alternatives offering similar or improved electrical specifications.
