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Product Detailed Parameters
- Description：SICFET N-CH 1200V 30A D2PAK-7
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：90mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id：4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：51 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：113.6W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Overview
The C3M0075120J is a third-generation Silicon Carbide (SiC) MOSFET from Wolfspeed, packaged in a TO-263-7L configuration. It features an N-channel enhancement mode design with a maximum drain-source voltage of 1200 V and a typical on-resistance of 75 mΩ at 25°C. The device supports a continuous drain current of 30 A and operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a total gate charge of 48 nC and a reverse recovery charge of 109 nC for the intrinsic diode.
Feature Summary
- Third-generation SiC technology providing high blocking voltage combined with low on-resistance.
- Low impedance package architecture incorporating a dedicated driver source pin to minimize parasitic inductance.
- Fast intrinsic body diode exhibiting low reverse recovery charge for efficient switching operations.
- High-speed switching capabilities supported by low input and output capacitances.
Applications
- Renewable energy systems
- EV battery chargers
- High voltage DC/DC converters
- Switch mode power supplies
Procurement Notes
Verify the specific ordering suffix 'J' corresponds to the TO-263-7L package variant when sourcing components. Confirm RoHS compliance status and REACh SVHC declarations directly with the manufacturer or authorized distributors prior to procurement. Ensure that the supply chain provides valid traceability documentation consistent with Wolfspeed quality standards.
Selection Notes
Select this component for designs requiring robust performance in high-voltage environments up to 1200 V. The TO-263-7L package facilitates surface-mount integration while maintaining thermal efficiency through the tab connection. Consider the 75 mΩ on-resistance and associated switching losses when evaluating system-level efficiency targets and cooling requirements.
Part Context
This part belongs to the C3M family of silicon carbide power MOSFETs manufactured by Wolfspeed. The product line utilizes advanced third-generation SiC technology to deliver superior power density compared to traditional silicon devices. The TO-263-7L package is specifically designed to support high-frequency switching applications with reduced electromagnetic interference.
Replacement Considerations
Direct replacements must match the 1200 V rating, TO-263-7L package, and comparable RDS(on) specifications. Verify compatibility with existing gate drive voltages and thermal management solutions before substituting with alternative manufacturers' parts.
FAQ
What is the recommended operational gate-source voltage?
The datasheet specifies a recommended turn-on gate voltage of 15 V with a ±5% regulation tolerance.
How does the package design affect switching performance?
The TO-263-7L package includes a dedicated Kelvin source pin (Pin 2) separate from the power source pins, which minimizes gate loop inductance and reduces switching noise.
