C3M0075120J2-TR

Overview

The Wolfspeed C3M0075120J2-TR is a third-generation silicon carbide (SiC) MOSFET in a TO-263-7 package. It features an N-channel enhancement mode configuration with a drain-source voltage of 1200 V and a continuous drain current of 30 A at 25°C case temperature. The device exhibits a maximum on-resistance of 90 mΩ at 150°C. Key electrical parameters include a gate charge of 48 nC, turn-on delay time of 7 ns, rise time of 15 ns, turn-off delay time of 24 ns, and fall time of 8 ns. Operating junction temperatures range from -55°C to +150°C.

Feature Summary

• Third-generation SiC MOSFET technology providing high blocking voltage and low on-resistance
• Low impedance package design incorporating a dedicated driver source pin
• High-speed switching capabilities supported by low capacitances
• Fast intrinsic diode characterized by low reverse recovery charge

Applications

• Renewable energy systems
• EV battery chargers
• High voltage DC/DC converters
• Switch mode power supplies

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the reel quantity and tape specifications associated with the TR designation. Ensure that the component matches the exact Wolfspeed part number for the intended PCB footprint and thermal requirements. Cross-reference datasheet revisions to confirm updated package dimensions or solder pad layouts prior to final procurement decisions.

Selection Notes

Select this component for applications requiring high-voltage handling and efficient thermal management within a surface-mount form factor. The inclusion of a Kelvin source pin facilitates precise gate drive control, minimizing parasitic inductance effects during high-speed switching transitions. Evaluate the thermal resistance characteristics relative to the system's cooling infrastructure to ensure operation remains within the specified junction temperature limits under load.

Part Context

This component belongs to the Wolfspeed C3M series of silicon carbide power MOSFETs. The series utilizes advanced SiC technology to deliver superior performance compared to traditional silicon devices. The TO-263-7 package variant provides a balance between power density and ease of integration into standard surface-mount assembly processes for industrial and automotive electronics.

Replacement Considerations

Direct replacements must match the 1200V rating, TO-263-7 package, and similar Rds(on) specifications. Verify compatibility with existing gate drive circuits due to potential differences in threshold voltage and gate charge requirements when substituting with other manufacturers' SiC MOSFETs.

FAQ

What is the purpose of Pin 2 in the TO-263-7 package?

Pin 2 serves as the Driver Source (Kelvin Source) connection, which allows for independent sensing of the source potential to improve gate drive accuracy.

Does the C3M0075120J2-TR support parallel operation?

Yes, the device can be used in parallel configurations, though designers must account for variations in threshold voltage and external gate resistance to ensure balanced current sharing.