C3M0075120K-A

$16.71

Description：75M 1200V 175C SIC FET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:cf09d1686f32 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：75M 1200V 175C SIC FET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：3.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：53 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1390 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：136W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

Download product information

C3M0075120K-A

Overview

The C3M0075120K-A is a third-generation Silicon Carbide (SiC) MOSFET featuring an N-channel enhancement mode configuration. It provides a drain-source voltage of 1200 V and a typical on-resistance of 75 mΩ at 25°C. The device supports a continuous drain current of 32 A at 25°C case temperature, with a maximum operating junction temperature of 175°C. Packaged in a TO-247-4L format, it includes separate driver source and power source pins to optimize switching performance.

Feature Summary

Third-generation SiC technology with optimized package design
Separate driver source pin for reduced gate ringing
High blocking voltage combined with low on-resistance
Fast intrinsic diode with low reverse recovery charge

Applications

Renewable energy systems
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies

Procurement Notes

Verify the specific suffix 'A' against official documentation to confirm package and electrical specifications match requirements. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure thermal management designs account for the specified junction temperature limits and power dissipation ratings.

Selection Notes

Select this component for high-voltage applications requiring fast switching speeds and high efficiency. The separate driver source pin facilitates lower parasitic inductance in gate drive loops. Evaluate thermal resistance characteristics and safe operating area curves to ensure reliable operation under expected load conditions and ambient temperatures.

Part Context

This part belongs to Wolfspeed's 1200V Silicon Carbide MOSFET family. It utilizes advanced SiC material properties to achieve superior performance compared to traditional silicon devices. The TO-247-4L package allows for through-hole mounting and efficient heat dissipation via the tab drain connection.

Replacement Considerations

Direct substitutes include other Wolfspeed 1200V SiC MOSFETs within the same generation or family series. Verify pinout compatibility and electrical parameters when considering alternative packages or manufacturers.

FAQ

What is the purpose of the separate driver source pin?

The separate driver source pin minimizes gate ringing and reduces switching losses by isolating the sensitive gate drive return path from the high-current power source return.