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Product Detailed Parameters
- Description：650V 120M SIC MOSFET
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：157mOhm @ 6.76A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 1.86mA
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：640 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：98W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The C3M0120065D is a third-generation silicon carbide (SiC) MOSFET from Wolfspeed, packaged in TO-247-3. It features a 650 V drain-source voltage rating and a maximum on-resistance of 157 mΩ at 25°C. The device supports a continuous drain current of 22 A at 25°C and 16 A at 100°C case temperature. It operates within a junction temperature range of -40 to +175°C and includes an intrinsic body diode with low reverse recovery charge.
Feature Summary
- Third-generation SiC MOSFET technology providing high blocking voltage combined with low on-resistance
- Fast intrinsic diode characterized by low reverse recovery charge for efficient switching operations
- Low parasitic capacitances enabling high-speed switching capabilities
- Halogen-free and RoHS compliant construction
Applications
- Solar inverters
- DC/DC converters
- Switch Mode Power Supplies
- EV battery chargers
- Uninterruptible Power Supplies (UPS)
Procurement Notes
Verify the specific part number against official Wolfspeed documentation to confirm current availability status and revision level. Ensure that the TO-247-3 package dimensions match the target PCB footprint requirements. Confirm compliance with relevant environmental directives such as RoHS and REACH before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring high efficiency and power density in hard-switching topologies like Totem-Pole PFC. Evaluate thermal management needs based on the specified junction-to-case thermal resistance. Consider the gate drive requirements, specifically the recommended turn-on voltage of 15V, to ensure optimal performance and reliability across the operating temperature range.
Part Context
This discrete SiC MOSFET belongs to the C3M family of Wolfspeed's third-generation silicon carbide power devices. These components are engineered to replace traditional silicon counterparts in high-voltage applications, offering superior switching speeds and reduced conduction losses. The TO-247-3 package provides a standardized form factor compatible with existing industry mounting solutions.
Replacement Considerations
Direct drop-in replacements for silicon diodes or other SiC Schottky diodes may be considered in specific rectifier circuits, but functional equivalence must be verified against the specific application's voltage and current ratings.
