C3M0120065J

$6.49

Description：650V 120M SIC MOSFET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:165af8a22ca2 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：650V 120M SIC MOSFET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：157mOhm @ 6.76A, 15V
Vgs(th) (Max) @ Id：3.6V @ 1.86mA
Gate Charge (Qg) (Max) @ Vgs：26 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：640 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：86W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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C3M0120065J

Overview

The C3M0120065J is a third-generation silicon carbide (SiC) MOSFET from Wolfspeed, designed for high-efficiency power conversion. It features a 650 V drain-source voltage rating and a typical on-resistance of 120 mΩ at 25°C. The device operates with a continuous drain current of 21 A and supports junction temperatures up to 175°C. Packaged in a TO-263-7 (D2PAK) format, it includes a Kelvin source pin for low-inductance switching. Key electrical parameters include a maximum gate-source voltage of +19 V transient and -4 V static turn-off.

Feature Summary

Third-generation SiC MOSFET technology providing high blocking voltage and low on-resistance
Low inductance package design incorporating a dedicated driver source pin
Fast intrinsic body diode characterized by low reverse recovery charge
High-speed switching capability supported by low parasitic capacitances

Applications

Solar inverters
DC/DC converters
Switch Mode Power Supplies
EV battery chargers
Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific revision status against the manufacturer's latest documentation before finalizing designs. Confirm that the TO-263-7 package dimensions align with the target PCB footprint requirements. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance values under expected operating loads.

Selection Notes

Select this component for applications requiring hard-switching topologies such as Totem-Pole PFC. Evaluate the system's thermal constraints against the 175°C maximum junction temperature limit. Consider the device's low output capacitance for high-frequency operation needs. Verify compatibility with recommended gate drive voltages ranging from -4 V to 15 V.

Part Context

This part belongs to the C3M series of discrete silicon carbide power MOSFETs. It represents Wolfspeed's third-generation technology platform, focusing on improved efficiency and power density compared to previous iterations. The product line targets industrial and commercial power supply markets demanding robust performance in compact form factors.

Replacement Considerations

Consult official substitution guides for compatible alternatives within the same voltage and current ratings. Verify pinout compatibility and thermal characteristics when considering cross-references. Do not assume functional equivalence without reviewing specific datasheet parameters.