C3M0120065L-TR

Description：SIC, MOSFET, 120M, 650V, TOLL, I
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c1cd23488208 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SIC, MOSFET, 120M, 650V, TOLL, I
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：157mOhm @ 6.76A, 15V
Vgs(th) (Max) @ Id：3.6V @ 1.86mA
Gate Charge (Qg) (Max) @ Vgs：26 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：640 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：86W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TOLL
Package / Case：8-PowerSFN

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C3M0120065L-TR

Overview

The C3M0120065L-TR is a third-generation silicon carbide (SiC) MOSFET manufactured by Wolfspeed. It features an N-channel enhancement mode configuration housed in a TOLL package with reel and cut tape options. Key electrical parameters include a drain-source voltage of 650 V, a continuous drain current of 21 A at 25°C case temperature, and a maximum on-state resistance of 157 mΩ at 175°C. The device supports a junction temperature range from -40°C to +175°C and includes a separate Kelvin source pin for optimized gate drive performance.

Feature Summary

Third-generation SiC MOSFET technology providing high blocking voltage combined with low on-resistance.
Optimized package design featuring a separate driver source pin to minimize gate ringing and switching losses.
Fast intrinsic diode characterized by low reverse recovery charge for efficient body diode conduction.
High-speed switching capabilities supported by low parasitic capacitances.

Applications

Datacenter power supplies
Telecom power supplies
Energy storage systems
Solar inverters
High voltage DC/DC converters

Procurement Notes

Verify the specific ordering suffix '-TR' corresponds to the required reel or cut tape packaging format. Confirm that the component meets RoHS compliance standards and REACH SVHC requirements for your region. Ensure the selected part number matches the exact thermal and electrical specifications required for the target application environment.

Selection Notes

Select this component based on its 650V rating and 21A continuous current capability at standard case temperatures. Consider the 157mΩ maximum on-resistance at elevated temperatures when calculating thermal management needs. Evaluate the low reverse recovery characteristics if utilizing the internal body diode in synchronous rectification topologies.

Part Context

This component belongs to the C3M™ series of silicon carbide power MOSFETs from Wolfspeed. It utilizes advanced third-generation SiC technology designed to improve system efficiency and power density compared to traditional silicon devices. The TOLL package provides a compact form factor suitable for surface mount applications requiring robust thermal performance.

Replacement Considerations

Direct replacements must match the 650V rating, TOLL package dimensions, and similar electrical characteristics. Verify compatibility with existing PCB footprints and thermal interface materials. Cross-reference with other Wolfspeed C3M series variants or industry-standard equivalents ensuring identical pinout configurations.