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Product Detailed Parameters
- Description：SIC, MOSFET, 120M, 1000V, TO-263
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：155mOhm @ 15A, 15V
- Vgs(th) (Max) @ Id：3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 15 V
- Vgs (Max)：+15V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：414 pF @ 600 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Overview
The C3M0120100J is a Wolfspeed N-Channel Enhancement Mode Silicon Carbide MOSFET in a TO-263-7 package. It features a drain-source voltage of 1000 V, continuous drain current of 22 A at 25°C case temperature, and on-resistance of 120 mΩ typical (155 mΩ max). The device operates within a junction temperature range of -55°C to +150°C with power dissipation of 83 W. Key electrical parameters include gate threshold voltage of 2.1 V typical, total gate charge of 18 nC, output capacitance of 48 pF, and reverse recovery charge of 78 nC.
Feature Summary
- Separate Kelvin source pin for low parasitic inductance and minimized gate ringing
- High blocking voltage combined with low on-resistance for reduced conduction losses
- Fast intrinsic diode with low reverse recovery charge
- Low output capacitance for improved switching performance
Applications
- Renewable energy systems
- EV battery chargers
- High voltage DC/DC converters
- Switch Mode Power Supplies
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging format and reel specifications. Confirm RoHS compliance status and REACh SVHC declarations directly with the manufacturer or authorized distributors before procurement. Ensure thermal management design aligns with the specified junction-to-case thermal resistance values provided in the datasheet.
Selection Notes
Select this component for high-efficiency applications requiring robust switching capabilities at 1000 V. The separate driver source pin facilitates precise gate drive control. Evaluate thermal requirements based on the 83 W power dissipation limit and ensure the operating junction temperature remains within the -55°C to +150°C range for optimal reliability.
Part Context
This part belongs to the C3M series of silicon carbide MOSFETs from Wolfspeed. The series utilizes advanced SiC technology to deliver high blocking voltages with low on-resistance. These devices are designed for high-power applications where efficiency and power density are critical, offering benefits such as increased system switching frequency and reduced cooling requirements compared to traditional silicon solutions.
Replacement Considerations
Direct replacements must match the 1000 V rating, TO-263-7 package, and similar electrical characteristics. Verify compatibility with existing gate drive circuits due to the specific gate charge and threshold voltage profiles. Consult official substitution lists for verified equivalents.
