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Product Detailed Parameters
- Description：SICFET N-CH 1000V 22A D2PAK-7
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：155mOhm @ 15A, 15V
- Vgs(th) (Max) @ Id：3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs：21.5 nC @ 15 V
- Vgs (Max)：+15V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 600 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Overview
The C3M0120100J is a Wolfspeed N-channel enhancement-mode Silicon Carbide (SiC) MOSFET in the C3M series. It features a TO-263-7 surface-mount package with an 8-pin configuration including a Kelvin source pin. Key electrical parameters include a drain-source voltage of 1000 V, a maximum continuous drain current of 22 A at 25°C case temperature, and a typical on-resistance of 120 mΩ. The device operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Separate Kelvin source pin for low parasitic inductance and reduced gate ringing
- High blocking voltage combined with low on-resistance
- Fast intrinsic body diode with low reverse recovery charge
- Low output capacitance
Applications
- Renewable energy systems
- EV battery chargers
- High voltage DC/DC converters
- Switch Mode Power Supplies
Procurement Notes
Verify component authenticity through authorized Wolfspeed distributors or direct manufacturer channels. Confirm datasheet revision status prior to design finalization. Ensure thermal management solutions align with specified junction-to-case thermal resistance limits. Validate that PCB layout accommodates the specific TO-263-7 footprint dimensions and recommended solder pad layouts provided in official documentation.
Selection Notes
Select this component for high-voltage applications requiring efficient power conversion. The separate driver source pin minimizes switching losses and electromagnetic interference. Consider the thermal derating curves when designing heat sinks for continuous operation above 25°C case temperatures. Evaluate system requirements against the 1000V breakdown voltage and 22A current rating to ensure adequate safety margins.
Part Context
This part belongs to the Wolfspeed C3M series of discrete Silicon Carbide MOSFETs. These devices utilize Wolfspeed's proprietary SiC technology to offer superior performance compared to traditional silicon counterparts. The series supports flexible system upgrades across various industry-standard package footprints, targeting power ranges from 1 kW to 60 kW for cost-optimized designs.
Replacement Considerations
Consult official Wolfspeed documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, package types, and thermal characteristics.
