C3M0160120J-TR

$10.12

Description：SIC, MOSFET, 160M, 1200V, TO-263
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e4d241700d24 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SIC, MOSFET, 160M, 1200V, TO-263
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：208mOhm @ 8.5A, 15V
Vgs(th) (Max) @ Id：3.6V @ 2.33mA
Gate Charge (Qg) (Max) @ Vgs：24 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：632 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：90W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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C3M0160120J-TR

Overview

The C3M0160120J is a Wolfspeed N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET utilizing 3rd generation Solicon technology. It features a TO-263-7 package with a dedicated driver source pin and 7mm creepage distance. Key electrical parameters include a drain-source voltage of 1200V, a maximum gate-source voltage of +19V/-8V, and a continuous drain current of 17A at 25°C case temperature. The on-resistance is typically 160mΩ at VGS=15V and ID=8.5A. Thermal resistance from junction to case is 1.38°C/W, with an operating junction temperature range of -55°C to +150°C.

Feature Summary

Low impedance package design incorporating a dedicated Kelvin source pin to minimize gate ringing and switching losses.
High blocking voltage capability combined with low on-resistance for improved system efficiency.
Fast intrinsic body diode characterized by low reverse recovery charge and peak current.
Halogen-free and RoHS compliant construction.

Applications

Renewable energy systems
High voltage DC/DC converters
Switch Mode Power Supplies
Uninterruptible Power Supplies

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging format and reel specifications. Confirm that the component meets all required environmental standards and regulatory compliance declarations relevant to your target market before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high-voltage isolation and fast switching speeds. Ensure the thermal management solution accommodates the specified power dissipation limits and junction temperature constraints. Verify that the gate drive circuitry supports the recommended operational voltage levels and accounts for the device's capacitive characteristics.

Part Context

This part belongs to the C3M SiC MOSFET family, representing Wolfspeed's third-generation silicon carbide technology. It is designed to replace traditional silicon IGBTs in high-efficiency applications, offering reduced cooling requirements and increased power density through lower conduction and switching losses.

Replacement Considerations

Direct replacement requires verifying pinout compatibility and thermal interface dimensions. Evaluate if alternative Wolfspeed parts within the same voltage class offer different Rds(on) or package options better suited for specific thermal or space constraints.

FAQ

What is the purpose of Pin 2 in the TO-263-7 package?

Pin 2 serves as the Kelvin source (driver source) connection, which allows for separate sensing of the source potential to reduce gate ringing and improve switching performance.