C3M0160120K1

$10.12

Description：MOSFET N-CH 1200V 17.9A TO247-4L
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk

SKU:6e5abf91b3c2 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 1200V 17.9A TO247-4L
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：17.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：208mOhm @ 8.5A, 15V
Vgs(th) (Max) @ Id：3.8V @ 2.33mA
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：730 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：103W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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C3M0160120K1

Overview

The C3M0160120K1 is a Silicon Carbide N-Channel Enhancement Mode MOSFET from Wolfspeed. It features a TO-247-4L LP package with a separate driver source pin. Key electrical parameters include a Drain-Source Voltage (VDS) of 1200 V and a maximum Gate-Source Voltage (VGS(max)) of +19 V transient. The typical on-resistance (RDS(on)) is 208 mΩ at VGS = 15 V and ID = 8.5 A. Continuous drain current is 17.9 A at TC = 25 °C. Switching energies at TJ = 175 °C, VDS = 800 V, and ID = 8.5 A are 81 μJ (turn-on) and 16 μJ (turn-off). Thermal resistance from junction to case is 1.13 °C/W.

Feature Summary

Optimized package design with a separate driver source pin to reduce switching losses and minimize gate ringing.
High blocking voltage combined with low on-resistance for improved system efficiency.
Fast intrinsic diode characteristics with low reverse recovery charge.
Halogen-free and RoHS compliant construction.

Applications

Motor Control
EV Battery Chargers
High Voltage DC/DC Converters
Solar/ESS
UPS

Procurement Notes

Verify the specific part number C3M0160120K1 against official Wolfspeed documentation to ensure compatibility with your circuit requirements. Confirm that the TO-247-4L LP package dimensions and mounting torque specifications align with your thermal management and mechanical design constraints. Ensure all electrical ratings, particularly voltage and temperature limits, meet your application's operational conditions before procurement.

Selection Notes

Select this component for high-voltage applications requiring efficient switching and robust thermal performance. The separate driver source pin facilitates precise gate control, reducing parasitic inductance effects. Consider the device's operating junction temperature range of -40 to +175 °C when designing thermal solutions. Evaluate the switching energy values relative to your target switching frequency to determine if additional cooling or snubber circuits are necessary.

Part Context

This device belongs to Wolfspeed's Silicon Carbide power MOSFET portfolio, designed for high-efficiency power conversion. The TO-247-4L LP package offers a lower profile compared to standard variants, aiding in compact system designs. The inclusion of a dedicated driver source pin distinguishes it from traditional three-terminal packages, enhancing switching performance by isolating the gate drive return path from the main current flow.

Replacement Considerations

No public confirmed substitute part numbers are provided in the datasheet. Verify compatibility with existing designs by comparing key parameters such as VDS, RDS(on), and package dimensions. Consult Wolfspeed technical support for potential alternatives if direct replacement is required.