C3M0280090J-TR

Overview

The C3M0280090J is a 900 V N-channel enhancement mode Silicon Carbide MOSFET in a TO-263-7 package. It features a maximum drain-source voltage of 900 V, a typical on-resistance of 320 mΩ at 25°C, and a continuous drain current of 11 A. The device includes a dedicated Kelvin source pin (Pin 2) for low-noise gate driving. Key electrical parameters include a total gate charge of 10 nC, an output capacitance stored energy of 5.5 µJ, and a thermal resistance from junction to case of 2.5 °C/W.

Feature Summary

• New C3M Silicon Carbide technology providing high blocking voltage with low on-resistance
• High-speed switching capability supported by low internal capacitances
• Integrated driver source (Kelvin connection) within the new low impedance package
• Fast intrinsic body diode characterized by low reverse recovery charge

Applications

• Renewable energy systems
• Lighting applications
• High voltage DC/DC converters
• Telecom power supplies
• Induction heating

Procurement Notes

Verify the specific ordering suffix '-TR' indicates tape and reel packaging when sourcing components. Confirm that the requested units match the active status listed in official documentation. Ensure compliance requirements such as RoHS and Halogen-free status are validated against the latest datasheet revision before finalizing procurement orders.

Selection Notes

Select this component for designs requiring a 900 V rating with moderate current handling up to 11 A. The TO-263-7 package facilitates surface mount assembly while providing robust thermal performance through the tab drain. Consider the 2.5 °C/W junction-to-case thermal resistance for heat sink sizing calculations to maintain safe operating temperatures under load.

Part Context

This part belongs to the Wolfspeed C3M series of third-generation Silicon Carbide MOSFETs. These devices utilize advanced SiC technology to deliver superior efficiency compared to traditional silicon alternatives. The C3M0280090J specifically targets mid-power applications where high voltage blocking and fast switching speeds are critical for system optimization.

Replacement Considerations

Direct substitutes require matching the 900 V rating, TO-263-7 package, and similar RDS(on) characteristics. Verify pinout compatibility, particularly the inclusion of a separate Kelvin source pin, to ensure seamless integration into existing gate driver circuits without PCB layout modifications.

FAQ

What is the function of Pin 2 in the TO-263-7 package?

Pin 2 serves as the Kelvin source connection, providing a dedicated path for the gate driver return to minimize noise coupling caused by high di/dt currents flowing through the main source pins.

How does the device handle reverse recovery during body diode conduction?

The C3M0280090J features a fast intrinsic diode with low reverse recovery charge (Qrr), which reduces switching losses and electromagnetic interference during hard-switching transitions involving the body diode.