C3M0350120D

$7.42

Description：SICFET N-CH 1200V 7.6A TO247-3
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:2a0aae1c74ed Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V 7.6A TO247-3
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：455mOhm @ 3.6A, 15V
Vgs(th) (Max) @ Id：3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：19 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：345 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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C3M0350120D

Overview

The C3M0350120D is a Silicon Carbide (SiC) MOSFET from the C3M family, utilizing Wolfspeed's C3M technology. It features an N-Channel Enhancement Mode configuration housed in a TO-247-3L package. Key electrical parameters include a Drain-Source Voltage (VDS) of 1200 V and a maximum Gate-Source Voltage (VGS(max)) of +19 V transient or -4/15 V static. At TC = 25°C, the typical On-resistance (RDS(on)) is 350 mΩ with a maximum of 455 mΩ. The DC Continuous Drain Current (ID) is rated at 7.6 A at 25°C case temperature and 25.5 A at 100°C case temperature. The device supports a Pulsed Drain Current (IDM) of 20 A and has a Power Dissipation (PD) of 50 W at 25°C. Operating junction and storage temperatures range from -55 to +150 °C.

Feature Summary

High blocking voltage capability combined with low on-state resistance for efficient power handling.
Fast intrinsic diode characteristics featuring low reverse recovery charge (Qrr).
High-speed switching performance enabled by low output capacitance values.

Applications

Renewable energy systems
High voltage DC/DC converters
Switch Mode Power Supplies
Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify component authenticity through official Wolfspeed channels or authorized distributors. Confirm that the received part matches the C3M0350120D marking and TO-247-3L package dimensions. Ensure compliance with RoHS and REACh standards as specified in the datasheet. Validate thermal management requirements against the provided derating curves before integration into final designs.

Selection Notes

Select this component for applications requiring high-voltage operation up to 1200 V with moderate current ratings around 7.6 A continuous. Consider the thermal resistance and power dissipation limits when designing heat sinks. Evaluate the switching energy losses relative to the external gate resistor and operating frequency to optimize system efficiency and electromagnetic interference.

Part Context

This discrete SiC MOSFET belongs to the C3M series, designed to replace traditional silicon devices in high-efficiency power conversion topologies. It leverages Wolfspeed's proprietary C3M technology to achieve superior performance metrics compared to standard silicon MOSFETs or IGBTs in similar voltage classes.

Replacement Considerations

Direct pin-to-pin replacements within the same voltage class include C3M0032120D (lower RDS(on)), C3M0021120D, and C3M0016120D. Lower current variants such as C3M0075120D are also available in compatible packages.