C3M0350120J-TR

$7.42

Description：SIC, MOSFET, 350M,1200V, TO-263-
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:01c2a6d421c9 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SIC, MOSFET, 350M,1200V, TO-263-
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：455mOhm @ 3.6A, 15V
Vgs(th) (Max) @ Id：3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：345 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：40.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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C3M0350120J-TR

Overview

The C3M0350120J-TR is a third-generation Silicon Carbide (SiC) MOSFET from Wolfspeed, packaged in a TO-263-7L. It features an N-channel enhancement mode configuration with a drain-source voltage of 1200 V and a maximum on-resistance of 455 mΩ at 25°C. The device supports a continuous drain current of 7.2 A and a pulsed drain current of 20 A. Key electrical parameters include a gate threshold voltage ranging from 1.8 V to 3.6 V, total gate charge of 13 nC, and input capacitance of 345 pF. Thermal characteristics specify a junction-to-case resistance of 2.9 °C/W, with an operating temperature range from -55°C to +150°C.

Feature Summary

Third-generation SiC MOSFET technology designed for high-speed switching with low output capacitances.
Low impedance package architecture featuring a dedicated driver source pin to minimize parasitic effects.
Fast intrinsic body diode characterized by low reverse recovery charge and minimal ringing.
High blocking voltage capability combined with low on-resistance for optimized system efficiency.

Applications

Renewable energy systems
High voltage DC/DC converters
Switch Mode Power Supplies
Uninterruptible Power Supplies

Procurement Notes

Verify the specific ordering suffix '-TR' against official documentation to confirm reel packaging specifications. Ensure compatibility with recommended solder pad layouts provided in the datasheet. Confirm that the component meets RoHS compliance standards as stated in the manufacturer's declaration. Validate thermal management requirements based on the specified junction-to-case resistance.

Selection Notes

Select this component for applications requiring high-voltage operation up to 1200 V with moderate current handling capabilities. Consider the TO-263-7L package for surface-mount implementations where thermal performance and low impedance are critical. Evaluate the trade-off between on-resistance and switching losses relative to the intended switching frequency and load conditions.

Part Context

This part belongs to the Wolfspeed C3M series of discrete Silicon Carbide power MOSFETs. The series utilizes advanced third-generation technology to deliver improved performance over previous iterations. The product line offers various封装 options to support diverse design requirements across industrial and commercial power electronics sectors.

Replacement Considerations

Consult official Wolfspeed documentation for verified substitute part numbers within the same family or generation. Cross-reference key parameters such as voltage rating, on-resistance, and package dimensions before implementation.