C3M0350120J

$7.42

Description：SICFET N-CH 1200V 7.2A TO263-7
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:983cde7f29c7 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V 7.2A TO263-7
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：455mOhm @ 3.6A, 15V
Vgs(th) (Max) @ Id：3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：345 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：40.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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C3M0350120J

Overview

The C3M0350120J is a 1200 V N-Channel Enhancement Mode Silicon Carbide MOSFET from Wolfspeed, utilizing third-generation SiC technology. It operates in TO-263-7 packages with a maximum drain-source voltage of 1200 V and an on-resistance of 455 mΩ at 25°C. The device supports continuous drain currents up to 7.2 A and pulsed currents of 20 A. It features a low impedance package with a dedicated driver source pin and provides 7 mm of creepage distance between the drain and source terminals.

Feature Summary

Third-generation Silicon Carbide (SiC) MOSFET technology
Low impedance package with integrated driver source pin
Fast intrinsic diode with low reverse recovery charge
High-speed switching capability with minimized capacitances

Applications

Renewable energy systems
High voltage DC/DC converters
Switch Mode Power Supplies
Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify component authenticity by matching the part number marking against official datasheet specifications. Confirm that the TO-263-7 package dimensions align with the provided outline drawing. Ensure compliance with RoHS standards and check for any specific handling requirements related to high-voltage semiconductor components during storage and assembly.

Selection Notes

Select this component for applications requiring high blocking voltage and efficient power conversion. Consider the thermal resistance and operating temperature range when designing heat dissipation solutions. Evaluate the gate drive requirements based on the specified transient and static gate-source voltage limits to ensure reliable switching performance.

Part Context

This device belongs to Wolfspeed's extensive portfolio of 1200 V SiC MOSFETs. It represents the company's third-generation technology advancements, offering improved efficiency and reduced cooling requirements compared to previous iterations. The product line is designed to support various packaging options for diverse industrial and commercial power electronics designs.