C3M0900170D

$5.04

Description：SICFET N-CH 1700V 4.4A TO247-3
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk

SKU:6dd519272d04 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1700V 4.4A TO247-3
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1700 V
Current - Continuous Drain (Id) @ 25°C：4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：1.25Ohm @ 1.99A, 15V
Vgs(th) (Max) @ Id：4.2V @ 550µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 15 V
Vgs (Max)：+20V, -8V
Input Capacitance (Ciss) (Max) @ Vds：202 pF @ 1200 V
FET Feature：-
Power Dissipation (Max)：41W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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C3M0900170D

Overview

The Wolfspeed C3M0900170D is a 1700 V, N-Channel Enhancement Mode Silicon Carbide Power MOSFET housed in a TO-247-3L package. It features a maximum drain-source voltage of 1700 V and a typical on-state resistance of 900 mΩ at 25°C. The device supports an operational gate-source voltage range of +12 V to +18 V with a turn-off capability down to 0 V. Continuous drain current is rated at 4.4 A at 25°C case temperature, rising to a pulsed rating of 15 A. Operating junction temperature spans from -55°C to +175°C.

Feature Summary

High blocking voltage combined with low on-resistance for efficient power handling
Ultra-low drain-gate capacitance enabling high-speed switching with reduced ringing
Gate drive compatibility with standard flyback controllers across a wide voltage range
Qualified for operation under high humidity and elevated temperature conditions

Applications

Auxiliary power supplies
Switch mode power supplies
High-voltage capacitive loads

Procurement Notes

Verify the specific suffix D corresponds to the TO-247-3L package variant when sourcing. Confirm RoHS compliance status through official documentation prior to integration. Ensure thermal management designs account for the specified junction-to-case thermal resistance limits. Validate that system gate drive voltages remain within the +12 V to +18 V operational window to maintain performance specifications.

Selection Notes

Select this component for applications requiring robust high-voltage isolation and fast switching speeds. The TO-247-3L package facilitates direct mounting to heatsinks for effective thermal dissipation. Consider the 175°C maximum junction temperature rating for high-temperature environments. Evaluate the total gate charge requirements against available driver capabilities to optimize switching transitions.

Part Context

This discrete silicon carbide MOSFET belongs to Wolfspeed's industrial-grade C3M series. It utilizes third-generation SiC technology manufactured on 200 mm wafers. The device is designed to replace traditional silicon counterparts in high-efficiency power conversion systems. It offers improved reliability metrics compared to previous generation devices in similar voltage classes.

Replacement Considerations

Direct replacements are not explicitly listed in the provided datasheet. Engineers should evaluate other C3M0900170x variants or comparable 1700 V SiC MOSFETs based on pinout compatibility and electrical parameter matching.