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The C4D20120H is a fourth-generation 1200 V Silicon Carbide Schottky diode in a TO-247-2 package. It features a maximum repetitive peak reverse voltage of 1200 V and a continuous forward current rating of 54 A at 25°C case temperature. The device exhibits a typical forward voltage of 1.5 V at 20 A and 25°C, with a junction-to-case thermal resistance of 0.61 °C/W. Operating temperatures range from -55°C to +175°C for the junction.
Verify compliance documentation availability for REACh, RoHS, and halogen-free requirements directly with Wolfspeed representatives or official product documentation portals before finalizing procurement specifications. Ensure that ordering suffixes do not imply functional changes unless explicitly supported by manufacturer datasheets. Confirm packaging types match actual delivery configurations.
Evaluate thermal management capabilities based on the specified junction-to-case thermal resistance and power dissipation limits under varying case temperatures. Consider the device's ability to be paralleled without thermal runaway concerns when scaling current requirements. Verify that the chosen operating frequency and voltage levels remain within the documented electrical characteristics for optimal performance.
This component belongs to Wolfspeed’s portfolio of discrete Silicon Carbide Schottky diodes designed to replace silicon-based solutions. It utilizes fourth-generation chip technology to achieve higher efficiency standards and support higher switching frequencies compared to traditional silicon devices, enabling reduced cooling requirements and improved system-level cost efficiency.
No public confirmed substitute part numbers are provided in the source material.