Diode Arrays C4D30120D product image

C4D30120D

$12.98
  • Description:DIODE ARR SIC 1200V 44A TO247-3
  • Series:Z-Rec®

SKU:ff4f0de46800 Category: Brand:

  
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C4D30120D is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Wolfspeed, Inc.. Its product description is DIODE ARR SIC 1200V 44A TO247-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for C4D30120D

  • Description:DIODE ARR SIC 1200V 44A TO247-3
  • Series:Z-Rec®
  • Mfr:Wolfspeed, Inc.
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):44A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 15 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:200 µA @ 1200 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for C4D30120D

C4D30120D

Diode Arrays Overview

The C4D30120D is a fourth-generation 1200 V, 30 A Silicon Carbide Schottky diode in a TO-247-3 package. It features a maximum repetitive peak reverse voltage of 1200 V and a continuous forward current rating of 88 A per device at 25°C case temperature. The typical thermal resistance from junction to case is 0.34 °C/W for the dual-die configuration. Electrical characteristics include a maximum forward voltage of 1.8 V at 15 A and 25°C, and a maximum reverse current of 200 µA at 1200 V reverse bias.

Diode Arrays Feature Summary

  • Zero reverse recovery current and forward recovery voltage due to majority carrier operation
  • Temperature-independent switching behavior enabling stable performance across operating ranges
  • Capability for parallel device connection without risk of thermal runaway

Diode Arrays Applications

  • Boost diodes in Power Factor Correction (PFC) stages
  • Free-wheeling diodes in inverter stages
  • Switch mode power supplies
  • Solar inverters
  • AC/DC converters

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official Wolfspeed documentation to confirm packaging type and compliance status. Ensure that the procurement channel provides valid RoHS and REACh compliance declarations as required by regulatory standards. Confirm that the delivered components match the exact part number specifications regarding electrical ratings and package dimensions before integration into the design.

Diode Arrays Selection Notes

Select this component for high-frequency applications requiring low switching losses and high efficiency. Consider the thermal resistance and current derating curves when designing heat dissipation systems. Evaluate the dV/dt ruggedness and surge current capabilities to ensure reliability under transient conditions. Verify that the package mounting torque requirements are met during assembly to maintain mechanical integrity.

Diode Arrays Part Context

This device belongs to Wolfspeed's fourth-generation Silicon Carbide product line, designed to replace silicon-based solutions in power electronics. It utilizes SiC technology to achieve higher power densities and improved thermal performance compared to traditional silicon diodes. The TO-247-3 package facilitates easy integration into existing designs while offering enhanced electrical characteristics.

Diode Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided datasheet.

Diode Arrays FAQ

Does the C4D30120D exhibit reverse recovery charge?

No, as a Silicon Carbide Schottky diode, it is a majority carrier device with zero reverse recovery charge.

What is the maximum junction temperature for this diode?

The maximum junction temperature is +175 °C.

How does the forward voltage change with temperature?

The forward voltage increases with temperature; it is typically 1.6 V at 25°C and up to 2.3 V at 175°C at 15 A.

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