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C4D30120D is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Wolfspeed, Inc.. Its product description is DIODE ARR SIC 1200V 44A TO247-3. Review the specifications below when checking this part for your BOM.
The C4D30120D is a fourth-generation 1200 V, 30 A Silicon Carbide Schottky diode in a TO-247-3 package. It features a maximum repetitive peak reverse voltage of 1200 V and a continuous forward current rating of 88 A per device at 25°C case temperature. The typical thermal resistance from junction to case is 0.34 °C/W for the dual-die configuration. Electrical characteristics include a maximum forward voltage of 1.8 V at 15 A and 25°C, and a maximum reverse current of 200 µA at 1200 V reverse bias.
Verify the specific ordering suffix against official Wolfspeed documentation to confirm packaging type and compliance status. Ensure that the procurement channel provides valid RoHS and REACh compliance declarations as required by regulatory standards. Confirm that the delivered components match the exact part number specifications regarding electrical ratings and package dimensions before integration into the design.
Select this component for high-frequency applications requiring low switching losses and high efficiency. Consider the thermal resistance and current derating curves when designing heat dissipation systems. Evaluate the dV/dt ruggedness and surge current capabilities to ensure reliability under transient conditions. Verify that the package mounting torque requirements are met during assembly to maintain mechanical integrity.
This device belongs to Wolfspeed's fourth-generation Silicon Carbide product line, designed to replace silicon-based solutions in power electronics. It utilizes SiC technology to achieve higher power densities and improved thermal performance compared to traditional silicon diodes. The TO-247-3 package facilitates easy integration into existing designs while offering enhanced electrical characteristics.
No public confirmed substitute part numbers are available in the provided datasheet.
No, as a Silicon Carbide Schottky diode, it is a majority carrier device with zero reverse recovery charge.
The maximum junction temperature is +175 °C.
The forward voltage increases with temperature; it is typically 1.6 V at 25°C and up to 2.3 V at 175°C at 15 A.
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