C4D30120H

C4D30120H

$15.56
  • Description:DIODE SIL CARB 1200V 94A TO2472
  • Series:-
  • Mfr:Wolfspeed, Inc.
  • Package:Bulk

SKU:bbf80adc538f Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE SIL CARB 1200V 94A TO2472
  • Series:-
  • Mfr:Wolfspeed, Inc.
  • Package:Bulk
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io):94A
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 30 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:250 µA @ 1200 V
  • Capacitance @ Vr, F:2177pF @ 0V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-247-2
  • Supplier Device Package:TO-247-2
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

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C4D30120H

Overview

The C4D30120H is a fourth-generation 1200 V Silicon Carbide Schottky diode manufactured by Wolfspeed. It features a TO-247-2 package and supports a continuous forward current of 94 A at 25°C case temperature, derating to 30 A at 155°C. The device exhibits a maximum forward voltage of 1.8 V at 30 A and 25°C, with a peak repetitive reverse voltage of 1200 V. Thermal resistance from junction to case is typically 0.34 °C/W, and the junction temperature range spans from -55°C to +175°C.

Feature Summary

  • Low forward voltage drop with a positive temperature coefficient
  • Zero reverse recovery current and forward recovery voltage
  • Temperature-independent switching behavior

Applications

  • Industrial switched mode power supplies
  • Uninterruptible and auxiliary power supplies
  • Boost stages for Power Factor Correction (PFC) and DC-DC converters
  • Solar inverters

Procurement Notes

Verify component authenticity through authorized Wolfspeed distributors or direct channels. Confirm RoHS and REACh compliance documentation availability prior to integration. Ensure thermal management design aligns with the specified junction-to-case thermal resistance and power dissipation limits under actual operating conditions.

Selection Notes

Select this component for high-efficiency rectification where zero reverse recovery characteristics are critical. Evaluate thermal derating curves to ensure continuous current ratings match system requirements at expected case temperatures. Consider the TO-247-2 mounting torque specifications for reliable mechanical assembly.

Part Context

This discrete SiC Schottky diode belongs to Wolfspeed's fourth-generation portfolio, designed to replace silicon-based solutions in high-frequency power electronics. It enables higher power densities and reduced cooling requirements compared to traditional silicon diodes, supporting systems that demand improved efficiency standards.

Replacement Considerations

Direct pin-compatible replacements within the same manufacturer family include the C4D30120D, which utilizes a TO-247-3 package. Verify package dimensions and mounting requirements when substituting between different package types.

FAQ

Does the C4D30120H exhibit reverse recovery charge?

No, as a majority carrier device, it has zero reverse recovery current and forward recovery voltage.

What is the maximum junction temperature rating?

The maximum junction temperature is +175°C.

C4D30120HC4D30120H
$15.56
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