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The C4D30120H is a fourth-generation 1200 V Silicon Carbide Schottky diode manufactured by Wolfspeed. It features a TO-247-2 package and supports a continuous forward current of 94 A at 25°C case temperature, derating to 30 A at 155°C. The device exhibits a maximum forward voltage of 1.8 V at 30 A and 25°C, with a peak repetitive reverse voltage of 1200 V. Thermal resistance from junction to case is typically 0.34 °C/W, and the junction temperature range spans from -55°C to +175°C.
Verify component authenticity through authorized Wolfspeed distributors or direct channels. Confirm RoHS and REACh compliance documentation availability prior to integration. Ensure thermal management design aligns with the specified junction-to-case thermal resistance and power dissipation limits under actual operating conditions.
Select this component for high-efficiency rectification where zero reverse recovery characteristics are critical. Evaluate thermal derating curves to ensure continuous current ratings match system requirements at expected case temperatures. Consider the TO-247-2 mounting torque specifications for reliable mechanical assembly.
This discrete SiC Schottky diode belongs to Wolfspeed's fourth-generation portfolio, designed to replace silicon-based solutions in high-frequency power electronics. It enables higher power densities and reduced cooling requirements compared to traditional silicon diodes, supporting systems that demand improved efficiency standards.
Direct pin-compatible replacements within the same manufacturer family include the C4D30120D, which utilizes a TO-247-3 package. Verify package dimensions and mounting requirements when substituting between different package types.
No, as a majority carrier device, it has zero reverse recovery current and forward recovery voltage.
The maximum junction temperature is +175°C.