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Product Detailed Parameters
- Description：DIODE SIL CARB 1200V 128A TO2472
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：128A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 40 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：300 µA @ 1200 V
- Capacitance @ Vr, F：2809pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-247-2
- Supplier Device Package：TO-247-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The C4D40120H is a fourth-generation 1200 V Silicon Carbide Schottky Barrier diode manufactured by Wolfspeed, Inc. It features a TO-247-2 package and offers a maximum repetitive peak reverse voltage of 1200 V. The device supports a continuous forward current of 128 A at a case temperature of 25 °C. Key electrical characteristics include a typical forward voltage of 1.5 V at 40 A and 25 °C, with a maximum junction-to-case thermal resistance of 0.225 °C/W. The component operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- Zero reverse recovery current and zero forward recovery voltage due to majority carrier operation
- Low forward voltage drop with a positive temperature coefficient
- Temperature-independent switching behavior for stable performance
Applications
- Industrial Switched Mode Power Supplies
- Uninterruptible & AUX Power Supplies
- Boost for PFC & DC-DC Stages
- Solar Inverters
Procurement Notes
Verify the specific part number C4D40120H against official Wolfspeed documentation to confirm current availability and revision status. Ensure that the required thermal management solutions align with the specified junction-to-case thermal resistance values. Confirm compliance requirements such as RoHS and REACH declarations directly with the manufacturer or authorized distributors before finalizing procurement plans.
Selection Notes
Select this component for high-efficiency power conversion systems requiring fast switching and low losses. The absence of reverse recovery charge makes it suitable for hard-switching applications where minimizing switching losses is critical. Consider the TO-247-2 package footprint when designing PCB layouts and ensure adequate cooling capabilities are integrated to handle the specified power dissipation limits under varying thermal conditions.
Part Context
This discrete Silicon Carbide Schottky diode belongs to Wolfspeed's fourth-generation product line. It is designed to replace traditional silicon-based solutions in high-frequency and high-power density applications. The device leverages SiC material properties to achieve superior thermal performance and efficiency compared to conventional semiconductor technologies.
Replacement Considerations
No public confirmed substitute part numbers are provided in the source material.
FAQ
Does the C4D40120H exhibit reverse recovery charge?
No, as a Silicon Carbide Schottky diode, it is a majority carrier device and exhibits zero reverse recovery current.
What is the maximum junction temperature rating?
The maximum junction temperature (Tj) is rated up to +175 °C.
