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The C4H10P800AY is a macro final RF power transistor manufactured by Ampleon USA Inc. It utilizes LDMOS technology and is housed in an OMP-780 package (outline OMP-780-4F-1). The device operates within the 600–1000 MHz frequency range with a drain-source voltage (VDS) of 50 V. Key performance metrics include a peak envelope power (PPEAK) of 800 W, a drain efficiency (ηD) of 61.1%, and a small-signal gain (Gp) of 18.3 dB. It is recommended for use with the B10H0710N40D driver.
Verify the specific ordering suffix against official documentation to ensure correct configuration. Confirm package outline compatibility with existing board layouts. Request application boards or simulation models from Ampleon support for design validation prior to production integration.
Select this component for designs requiring 800 W peak power in the 600–1000 MHz band. Ensure the system supports a 50 V supply rail. Pair with the specified B10H0710N40D driver to achieve optimal gain and efficiency characteristics as defined in the product catalog.
This part belongs to Ampleon's Macro products portfolio, specifically designed for wireless infrastructure. It represents the company's LDMOS technology leadership, offering market-leading RF power solutions for high-efficiency base stations.
The BLP9H10S-500AWT serves as a comparable alternative within the same frequency band but offers lower peak power (620 W) and slightly different efficiency metrics.