C4H27P400AY

Overview

The C4H27P400AY is a 400 W Gallium Nitride (GaN) on Silicon Carbide (SiC) asymmetric Doherty power transistor manufactured by Ampleon USA Inc. Designed for base station applications, it operates within the frequency range of 2620 MHz to 2690 MHz. The device features a 14 dB gain and supports a maximum drain-source breakdown voltage of 50 V. It utilizes the OMP-780 package configuration, ensuring robust performance in high-frequency RF environments.

Feature Summary

• Utilizes Gallium Nitride on Silicon Carbide technology for enhanced thermal and electrical performance
• Engineered specifically for asymmetric Doherty amplifier architectures
• Optimized for high-efficiency operation in cellular base station infrastructure

Applications

• Cellular base station power amplification
• Asymmetric Doherty transmitter modules
• RF power systems operating in the 2.6 GHz band

Procurement Notes

Verify component authenticity through authorized Ampleon distributors or certified supply chain partners. Confirm that the received units match the specific OMP-780 package designation and include appropriate moisture sensitivity level handling procedures as defined by the manufacturer's datasheet specifications.

Selection Notes

Select this component when designing systems requiring 400 W output power at 2.62–2.69 GHz with asymmetric Doherty topology. Ensure the design accommodates the 50 V drain voltage requirement and integrates compatible biasing networks suitable for GaN HEMT devices.

Part Context

This part belongs to Ampleon’s C4H series of GaN power transistors, which are tailored for modern wireless communication infrastructure. The C4H27P400AY specifically targets the 2.6 GHz spectrum, complementing other models like the C4H22P400A and C4H15P400A across different frequency bands.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult Ampleon official resources for potential cross-reference options.