C6D10065G

Overview

The C6D10065G is a Silicon Carbide Schottky diode rated for 650 V repetitive peak reverse voltage and 10 A continuous forward current. It features a TO-263-2 surface-mount package with a maximum junction temperature of +175 °C. Electrical characteristics include a typical forward voltage of 1.27 V at 10 A and 25 °C, and a maximum reverse leakage current of 20 µA at 650 V and 25 °C. The device exhibits zero reverse recovery charge and operates within a thermal resistance range of 1.38 °C/W from junction to case.

Feature Summary

• Zero reverse recovery current and forward recovery voltage due to majority carrier operation
• Temperature-independent switching behavior ensuring consistent performance across operating ranges
• Low forward voltage drop with a positive temperature coefficient
• Minimal capacitive turn-off behavior characterized by low leakage current

Applications

• Industrial power supplies
• Switch mode power supplies
• Server and telecom power supplies
• Power factor correction circuits
• Solar inverters
• Uninterruptible power supplies

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the TO-263-2 package dimensions align with the recommended solder pad layout provided in the latest release notes. Ensure compliance with RoHS and REACH directives as stated in the product declaration. Validate thermal management requirements based on the junction-to-case thermal resistance values under actual operating conditions.

Selection Notes

Select this component for applications requiring high-frequency switching and reduced cooling overhead compared to silicon solutions. The device supports easy paralleling without thermal runaway concerns, making it suitable for higher power density designs. Evaluate the forward voltage characteristics at expected operating temperatures to ensure efficiency targets are met. Consider the surge current capabilities when designing protection circuits for transient load conditions.

Part Context

This component belongs to the Wolfspeed Silicon Carbide Schottky diode family, designed to replace traditional silicon rectifiers in power electronics systems. The wide bandgap material enables higher operating frequencies and improved thermal performance. The product line emphasizes system-level cost reduction through lower cooling requirements and enhanced efficiency standards.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.