ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE SIL CARB 650V 66A TO2472
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：66A
- Voltage - Forward (Vf) (Max) @ If：1.5 V @ 20 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：30 µA @ 650 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：TO-247-2
- Supplier Device Package：TO-247-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
Download product information
Overview
The C6D20065H is a 6th generation 650 V Silicon Carbide Schottky diode in a TO-247-2 package. It features a maximum continuous forward current of 66 A at 25°C and 21 A at 125°C, with a repetitive peak reverse voltage of 650 V. The typical forward voltage is 1.27 V at 20 A and 25°C, rising to 1.37 V at 175°C. Power dissipation reaches 174 W at 25°C junction temperature. Thermal resistance from junction to case is typically 0.76 °C/W.
Feature Summary
- Low forward voltage drop with positive temperature coefficient
- Zero reverse recovery current and forward recovery voltage
- Temperature-independent switching behavior
- Low profile package with low inductance
Applications
- Industrial power supplies
- Uninterruptible & auxiliary power supplies
- Switch mode power supplies
- Solar inverters
- Boost for PFC & DC-DC stages
Procurement Notes
Verify the specific ordering suffix against official Wolfspeed documentation to confirm packing type and compliance status. Ensure thermal management solutions align with the specified junction-to-case thermal resistance and derating curves for the target operating environment. Confirm RoHS and REACH compliance requirements match project specifications before finalizing procurement.
Selection Notes
Select this component for high-efficiency applications requiring zero reverse recovery charge and robust surge capability. Evaluate thermal constraints carefully, as continuous current ratings decrease significantly at elevated temperatures. Consider paralleling multiple units if higher current handling is required without risking thermal runaway.
Part Context
This device belongs to Wolfspeed's 6th generation 650 V Silicon Carbide Schottky diode family. It utilizes SiC technology to achieve lower conduction losses compared to silicon-based solutions, enabling higher operating frequencies and improved power density in diverse power electronics systems.
Replacement Considerations
Direct replacement data is not provided in the source material. Verify compatibility with existing circuit designs when substituting other SiC Schottky diodes or silicon rectifiers.
