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Product Detailed Parameters
- Description：DIODE SIL CARB 650V 136A TO2472
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：136A
- Voltage - Forward (Vf) (Max) @ If：1.5 V @ 20 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：100 µA @ 650 V
- Capacitance @ Vr, F：2819pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-247-2
- Supplier Device Package：TO-247-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The Wolfspeed C6D50065H is a 6th generation 650 V, 50 A Silicon Carbide Schottky Barrier diode housed in a TO-247-2 package. It features a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 136 A at 25°C case temperature. The device exhibits a typical forward voltage of 1.30 V at 50 A and 25°C, with a maximum junction-to-case thermal resistance of 0.43 °C/W. Operating within a junction temperature range of -55 to +175°C, it provides robust performance for high-efficiency power electronics.
Feature Summary
- Low forward voltage drop with positive temperature coefficient
- Zero reverse recovery current and forward recovery voltage
- Temperature-independent switching behavior
- Low profile package with low inductance
Applications
- Industrial Power Supplies
- Uninterruptible & Aux Power Supplies
- Switch Mode Power Supplies
- Solar Inverters
- Boost for PFC & DC-DC Stages
Procurement Notes
Verify the specific ordering number C6D50065H against official Wolfspeed documentation to confirm availability and compliance status. Ensure that the TO-247-2 package dimensions and mounting torque specifications align with your PCB layout and mechanical assembly requirements before finalizing procurement decisions.
Selection Notes
Select this component when designing systems requiring high efficiency and reduced cooling needs compared to silicon solutions. Consider its ability to operate at higher frequencies and power densities. Verify that the thermal management strategy accommodates the specified junction temperature limits and power dissipation characteristics under expected operating conditions.
Part Context
This part belongs to Wolfspeed's 6th generation 650 V Silicon Carbide Schottky Diode family. These devices are designed to replace traditional silicon diodes, offering superior performance metrics such as lower conduction losses and faster switching speeds. The TO-247-2 package facilitates easy integration into existing industrial and commercial power supply designs.
Replacement Considerations
The datasheet notes direct drop-in replacement potential for current silicon diodes and other silicon carbide diodes. Verify pinout compatibility and thermal interface requirements when substituting legacy components to ensure seamless integration without redesigning the surrounding circuitry.
FAQ
Does the C6D50065H exhibit reverse recovery charge?
No, as a majority carrier device, the SiC Schottky diode has zero reverse recovery charge.
What is the maximum junction temperature for this diode?
The maximum junction temperature (Tj) is +175°C.
