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The CA3082 is a general-purpose high-current NPN transistor array manufactured by Renesas Electronics Corporation. It integrates seven silicon NPN transistors on a common monolithic substrate, configured in a common collector arrangement. The device supports a maximum collector current of 100mA per transistor and operates within a temperature range of -55°C to 125°C. Electrical specifications include a collector-to-emitter breakdown voltage of 16V and a typical collector-to-emitter saturation voltage of 0.4V at 50mA. Available packages include 16-lead PDIP, SOIC, and CERDIP configurations.
Verify the specific package variant required, such as PDIP, SOIC, or CERDIP, as pinouts and thermal characteristics differ between forms. Confirm that the common collector configuration aligns with the system design requirements. Ensure proper handling procedures are followed due to electrostatic discharge sensitivity. Check datasheet notes regarding substrate connection to maintain isolation between transistors.
Select the CA3082 when a common collector output configuration is necessary for driving loads like LEDs or relays. Choose the CA3081 if a common emitter configuration is preferred instead. Evaluate thermal resistance values based on the chosen package type to ensure power dissipation limits are not exceeded during operation. Verify that the 100mA current rating meets the load requirements.
The CA3082 belongs to the CA3081/CA3082 family of general-purpose high-current NPN transistor arrays. While the CA3081 utilizes a common emitter configuration, the CA3082 employs a common collector setup. Both devices share the same physical construction of seven transistors on a monolithic substrate but offer different electrical topologies for varied circuit integration needs.
Consult manufacturer technical support for confirmed substitute part numbers. Verify compatibility regarding package dimensions, pinout assignments, and electrical ratings before implementation.