CAB3R5M12DM4

Overview

The Wolfspeed CAB3R5M12DM4 is a silicon carbide half-bridge module rated at 1200 V with a typical on-state resistance of 3.5 mΩ. It features two N-channel MOSFETs and supports a continuous drain current of 383 A at 25 °C case temperature, increasing to 293 A at 90 °C. The device operates within a virtual junction temperature range of -40 °C to +175 °C. Key electrical parameters include a maximum gate-source voltage of +19 V and a recommended operating voltage of -4 V/+15 V. The module utilizes a press-fit mounting style and includes an aluminum-silicon carbide baseplate.

Feature Summary

• Ultra-low switching and conduction losses for high-frequency operation
• Zero turn-off tail current from the MOSFET ensuring fail-safe normally-off operation
• Lightweight aluminum-silicon carbide baseplate for improved thermal management

Applications

• Electric mobility and motor drives
• Electric vehicle chargers
• High-efficiency converters and inverters
• Renewable energy systems

Procurement Notes

Verify component authenticity by checking the Wolfspeed datasheet revision date and part number against official documentation. Confirm that the specific batch meets RoHS and REACh compliance standards required for your region. Ensure proper handling procedures are followed due to the sensitivity of silicon carbide materials during installation.

Selection Notes

Select this module when designing systems requiring high power density and low thermal resistance. The DM package format allows for direct press-fit mounting, reducing assembly complexity. Consider the stray inductance of 10.9 nH when designing the DC bus layout to minimize voltage overshoot during switching transitions.

Part Context

This component belongs to the WolfPACK DM series of discrete semiconductor modules manufactured by Wolfspeed. It is designed as a compact solution for industrial and automotive power electronics applications where size constraints and efficiency are critical design factors.

Replacement Considerations

Direct replacements within the same WolfPACK DM family include the CAB003M09DM3. Verify pinout compatibility and thermal characteristics before substituting other manufacturers' parts.

FAQ

What is the maximum transient gate-source voltage allowed?

The maximum transient gate-source voltage (VGS max) is +19 V.

How does the continuous drain current change with case temperature?

The continuous drain current decreases from 383 A at a case temperature of 25 °C to 293 A at a case temperature of 90 °C.

What is the internal gate resistance of the MOSFET?

The internal gate resistance (RG(int)) is typically 1.6 Ω.