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Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 1015A MODULE
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Box
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：1015A (Tc)
- Rds On (Max) @ Id, Vgs：1.73mOhm @ 760A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 280mA
- Gate Charge (Qg) (Max) @ Vgs：2724nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：79400pF @ 800V
- Power - Max：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Grade：-
- Qualification：-
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Overview
The Wolfspeed CAB760M12HM3 is a silicon carbide half-bridge power module rated for 1200 V and 760 A. It utilizes third-generation SiC MOSFET technology with a typical on-state resistance of 1.33 mΩ at 25 °C. The device features a low inductance, low profile 62 mm footprint and operates up to a maximum junction temperature of 175 °C. Key electrical parameters include a gate-source voltage range of -8 V to +19 V transient and -4 V to +15 V static. The module incorporates an NTC temperature sensor and weighs 179 g.
Feature Summary
- Implements switching optimized third generation SiC MOSFET technology
- Features a light weight AlSiC baseplate and high reliability silicon nitride insulator
- Designed for system retrofit compatibility with standard 62 mm baseplates
Applications
- Railway & Traction systems
- Solar energy inverters
- Electric vehicle (EV) chargers
- Industrial automation & testing equipment
Procurement Notes
Verify the specific ordering suffix when purchasing. The suffix 'T' indicates the inclusion of pre-applied phase change thermal interface material, whereas the absence of this suffix denotes the version without it. Confirm that the received component matches the required thermal configuration for the intended assembly process.
Selection Notes
Select this module for applications requiring high current density and compact form factors. Ensure the cooling solution maintains the case temperature within limits to support the 175 °C junction rating. Verify that the gate drive circuitry accommodates the recommended ±15 V static gate voltage and accounts for the internal gate resistance during switching design.
Part Context
This component belongs to the Wolfspeed HM3 series of high-performance silicon carbide modules. It is designed to replace legacy silicon-based solutions in high-power converters. The module provides enhanced efficiency through reduced switching and conduction losses compared to traditional technologies.
Replacement Considerations
Direct replacements are not explicitly listed in the datasheet. Designers should evaluate other Wolfspeed HM3 or HN series modules based on current ratings and pinout compatibility. Verify thermal resistance and stray inductance specifications when substituting with similar packages.
FAQ
What is the difference between CAB760M12HM3 and CAB760M12HM3T?
The CAB760M12HM3T includes pre-applied phase change thermal interface material, while the CAB760M12HM3 does not.
What is the maximum recommended static gate-source voltage?
The recommended static gate-source voltage is -4 V for turn-off and +15 V for turn-on.
Does the module include a temperature sensor?
Yes, the module integrates an NTC thermistor for temperature monitoring.
