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The Wolfspeed CAB760M12HM3R is a Silicon Carbide (SiC) half-bridge power module rated for 1200 V and 760 A. It utilizes third-generation SiC MOSFET technology with a low inductance, low profile 62 mm footprint. The device features an AlSiC baseplate and high-reliability silicon nitride insulator, supporting operation up to a 175 °C junction temperature. Key electrical parameters include a typical RDS(on) of 1.33 mΩ at 25 °C and stray inductance of 4.9 nH between terminals 1 and 3.
Verify the specific ordering suffix when purchasing. The standard part number CAB760M12HM3R does not include pre-applied thermal interface material. The variant CAB760M12HM3RT includes pre-applied phase change thermal interface material. Confirm the required configuration matches the system's thermal management design before procurement.
Select this module for applications requiring high current density and fast switching speeds within a compact form factor. Ensure the gate drive circuitry supports the recommended VGS range of -4 V to +15 V. Verify that the system layout accommodates the 62 mm footprint and mounting torque specifications for the M6 baseplate bolts.
This component belongs to the HM High Performance 62 mm series from Wolfspeed. It is designed as a right-side half-bridge module suitable for paralleling configurations. The module is industrial qualified and represents a transition toward higher power density solutions in modern power electronics systems.
Direct replacements must match the 1200 V rating, 62 mm footprint, and half-bridge configuration. Evaluate parasitic inductance and thermal resistance characteristics carefully. Consult official substitution lists or engineering support for verified equivalent components.