CAB7R5A23GM4T

Overview

The Wolfspeed CAB7R5A23GM4T is a 2300 V, 7.5 mΩ Silicon Carbide half-bridge power module utilizing Gen4 technology with a soft body diode. It features press-fit pins for assembly and an aluminum nitride substrate. The module includes pre-applied phase change thermal interface material. Key electrical parameters include a maximum drain-source voltage of 2300 V, continuous DC drain current of 150 A at THS = 75 °C, and pulsed drain current of 600 A. Power dissipation reaches 510 W at THS = 75 °C. Operating virtual junction temperature ranges from -40 °C to +150 °C.

Feature Summary

• Fully SiC MOSFET-based design for ultra-low switching and conduction losses
• Press-fit pin configuration for simplified mechanical assembly
• Aluminum nitride substrate enabling compact and lightweight system designs
• Soft body diode characteristics reducing reverse recovery energy

Applications

• High-efficiency converters and inverters
• Energy storage systems
• DC fast chargers
• Solar inverters
• Smart-grid and grid-tied distributed generation

Procurement Notes

Verify the specific ordering suffix when purchasing. The 'T' suffix indicates the inclusion of pre-applied phase change thermal interface material. Confirm that the application requires the 2300 V rating and half-bridge topology. Ensure heatsink mounting torque adheres to the specified 2.0 to 2.3 N-m range for M4 bolts to maintain proper thermal contact and mechanical integrity.

Selection Notes

Select this component for applications requiring high voltage blocking capability above standard 1200 V ratings. Evaluate the 7.5 mΩ on-resistance against system efficiency targets. Consider the 150 A continuous current limit relative to the expected heatsink temperature. Verify compatibility with the press-fit mounting method and ensure gate drive voltages align with the recommended -4 V to +15 V operational range.

Part Context

This module belongs to the WolfPACK series designed for industrial and renewable energy applications. It utilizes Wolfspeed's fourth-generation silicon carbide technology. The package is optimized for high-power density systems operating at 1500 VDC bus voltages. It serves as a core switching element in two-level conversion topologies.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Direct replacement requires matching the 2300 V rating, half-bridge configuration, and physical dimensions. Verify thermal resistance and gate charge specifications before substituting with other manufacturers' components.

FAQ

What is the difference between CAB7R5A23GM4 and CAB7R5A23GM4T?

The 'T' suffix indicates that the module comes with pre-applied phase change thermal interface material. The non-T version does not include this material.

What is the maximum operational gate-source voltage?

The recommended operational gate-source voltage is -4 V to +15 V. Transient maximums can reach -10 V to +23 V.

Is this module UL certified?

Yes, the module conforms to UL STD 1557 as an electrically isolated semiconductor device component.