CAS350M12BM3

Overview

The CAS350M12BM3 is a silicon carbide half-bridge module rated for 1200 V and 350 A. It features an industry-standard 62 mm footprint with a copper baseplate and aluminum nitride insulator. Key electrical parameters include a maximum drain-source voltage of 1200 V, a continuous drain current of 424 A at 25 °C case temperature, and a typical on-state resistance of 5.2 mΩ at 25 °C. The integrated Schottky diode exhibits a forward voltage of 2.0 V at 25 °C. Operating temperatures range from -40 °C to 150 °C continuously, with intermittent capability up to 175 °C.

Feature Summary

• Ultra-low loss operation enabled by zero reverse recovery in the diode and zero turn-off tail current in the MOSFET.
• Standardized 62 mm form factor designed to facilitate system retrofitting into existing industrial architectures.
• Robust thermal management utilizing a copper baseplate paired with an aluminum nitride insulator layer.

Applications

• Induction heating systems
• Motor drives
• Renewables energy inverters
• Railway auxiliary and traction power supplies
• EV fast charging stations

Procurement Notes

Verify the specific ordering suffix when sourcing components. The CAS350M12BM3 designation indicates the absence of pre-applied phase change thermal interface material. Conversely, the CAS350M12BM3T variant includes this material. Confirm the required configuration matches the assembly specifications before procurement to ensure compatibility with the intended cooling strategy.

Selection Notes

Select the CAS350M12BM3 for applications requiring high-frequency switching with minimal parasitic losses. The device supports a recommended gate drive voltage of +15 V/-4 V. Designers must account for the stray inductance of 11.1 nH within the module. Ensure the external gate resistor selection aligns with the desired switching speed and dv/dt requirements while maintaining safe operating area limits.

Part Context

This component belongs to the BM3 generation of Wolfspeed silicon carbide modules. It shares the standardized 62 mm physical footprint with other devices in the series, allowing for mechanical interchangeability within compatible system designs. The platform targets high-power density industrial applications where efficiency and thermal performance are critical constraints.

Replacement Considerations

Direct replacements within the same family include the CAS530M12BM3 and CAS350M12XM3. Verify that the substitute part number maintains the required 1200 V blocking voltage and meets or exceeds the 350 A current rating. Physical mounting dimensions and pinout configurations must be confirmed to ensure mechanical fit without redesigning the host system.

FAQ

What is the difference between CAS350M12BM3 and CAS350M12BM3T?

The CAS350M12BM3 does not include pre-applied phase change thermal interface material, whereas the CAS350M12BM3T comes with this material factory-installed.

Does this module exhibit reverse recovery charge?

No, the integrated SiC Schottky diodes feature zero reverse recovery charge, although they do contribute capacitive energy during switching transitions.

What is the maximum recommended gate-source voltage?

The recommended static gate-source voltage is +15 V/-4 V. The maximum transient value allowed is +23 V/-10 V.