ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 640A MODULE
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Box
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：640A (Tc)
- Rds On (Max) @ Id, Vgs：2.97mOhm @ 480A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 160mA
- Gate Charge (Qg) (Max) @ Vgs：1590nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：43100pF @ 800V
- Power - Max：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Grade：-
- Qualification：-
Download product information
Overview
The CAS480M12HM3 is a silicon carbide half-bridge module rated at 1200 V and 480 A. It features a low inductance, low profile 62 mm footprint with an AlSiC baseplate and high reliability silicon nitride insulator. The device implements switching optimized third generation SiC MOSFET technology for high junction temperature operation up to 175 °C. Key electrical parameters include a drain-source breakdown voltage of 1200 V, a typical on-state resistance of 2.97 mΩ at 480 A, and a maximum continuous drain current of 640 A at 25 °C case temperature. The module includes integrated NTC temperature sensors.
Feature Summary
- Low inductance design with a compact 62 mm footprint enabling system retrofit compatibility
- High junction temperature capability operating up to 175 °C
- Utilizes switching optimized third generation silicon carbide MOSFET technology
- Features zero reverse recovery characteristics from the integrated diodes
Applications
- Railway & Traction systems
- Solar energy inverters
- Electric vehicle charging infrastructure
- Industrial automation and testing equipment
Procurement Notes
Verify the specific ordering suffix when purchasing. The CAS480M12HM3 designation indicates the module without pre-applied phase change thermal interface material. The CAS480M12HM3T variant includes pre-applied phase change thermal interface material. Confirm the required version matches the assembly specifications before procurement.
Selection Notes
Select this component based on its 1200 V rating and 480 A nominal current capacity within the 62 mm package family. Ensure the application requires a half-bridge configuration compatible with the specified gate drive voltages. Verify that the stray inductance requirements align with the internal 4.9 nH specification for optimal switching performance.
Part Context
This part belongs to Wolfspeed's Gen 3 high performance 62 mm power module platform (HM3). It is designed to provide system advantages through low inductance layout while maintaining standard industry form factors. The HM3 series supports various companion gate driver boards for evaluation and integration.
Replacement Considerations
CAS480M12HM3T serves as the direct functional equivalent with pre-applied thermal interface material. Other modules within the HM3 family share the same physical footprint but differ in current ratings and voltage specifications.
FAQ
What is the difference between CAS480M12HM3 and CAS480M12HM3T?
The CAS480M12HM3 does not include pre-applied phase change thermal interface material, whereas the CAS480M12HM3T comes with pre-applied phase change thermal interface material.
What is the recommended gate-source voltage range?
The recommended static gate-source voltage range is -4 V to +15 V. The maximum transient value is -8 V to +19 V.
Does the module contain integrated temperature sensing?
Yes, the module includes two NTC temperature sensors (NTC1 and NTC2) with a resistance of 4700 Ω at 25 °C.
