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The CBB032M12FM3T is a 1200 V, 32 mΩ Silicon Carbide (SiC) full-bridge power module from Wolfspeed. It features four N-channel MOSFET positions with a typical DC continuous drain current of 39 A at THS = 50 °C and TVJ ≤ 150 °C. The module includes an integrated NTC thermistor for thermal monitoring and utilizes press-fit pins for assembly. The 'T' suffix indicates the inclusion of pre-applied phase change thermal interface material. Key electrical parameters include a maximum gate-source voltage of +23 V transient and -4 V to +15 V operational, a junction-to-heatsink thermal resistance of 1.25 °C/W, and a stray inductance of 14.2 nH.
Verify the specific ordering code against project requirements. The CBB032M12FM3T variant explicitly includes pre-applied thermal interface material, whereas the non-T version does not. Confirm that the datasheet revision matches the design specifications before finalizing procurement orders.
Select this component for applications requiring a compact full-bridge topology with high power density. Ensure the system design accommodates the 14.2 nH stray inductance and utilizes appropriate gate drive voltages within the -4 V to +15 V operational range. Verify heatsink temperatures to maintain junction limits under expected load conditions.
This part belongs to the Wolfspeed WolfPACK™ series of silicon carbide power modules. It is specifically engineered as a full-bridge configuration to support medium-power conversion systems. The module integrates advanced SiC technology into a standardized footprint to facilitate rapid design implementation and system scalability.
Direct replacements are limited by the specific full-bridge topology and 32 mΩ on-resistance. Evaluate other Wolfspeed FM3 series modules only if electrical ratings and physical dimensions align precisely with the existing board layout and thermal constraints.
The CBB032M12FM3T includes pre-applied phase change thermal interface material, while the CBB032M12FM3 does not.
Yes, the module features an integrated NTC thermistor for thermal monitoring.
The recommended operational gate-source voltage range is -4 V to +15 V.