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Product Detailed Parameters
- Description：DIODE SIL CARBIDE 650V 18A 4DFN
- Series：-
- Mfr：Bruckewell
- Package：Cut Tape (CT),Tape & Box (TB),-
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：18A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 6 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：20 µA @ 650 V
- Capacitance @ Vr, F：-
- Mounting Type：Surface Mount
- Package / Case：4-PowerTSFN
- Supplier Device Package：4-DFN (8x8)
- Operating Temperature - Junction：-55°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The CBR06P65HL is a silicon carbide (SiC) Schottky diode manufactured by Bruckewell Technology Ltd. It features a 650V reverse voltage rating and a 6A forward current capability. The device utilizes a surface-mount 4-DFN package measuring 8x8mm, designed for compact integration in electronic circuits. As part of the GaN on Sapphire digital power portfolio, it serves as a high-performance discrete semiconductor component suitable for mission-critical applications.
Feature Summary
- Utilizes Silicon Carbide (SiC) technology for superior thermal and electrical performance compared to traditional silicon devices.
- Designed specifically for Surface Mount Technology (SMT) to enable compact circuit board layouts.
- Compliant with European Union RoHS Directive 2011/65/EU lead-free requirements.
Applications
- Power Factor Correction (PFC) stages in digital power supplies
- Electric Vehicle (EV) power systems
- AI infrastructure power solutions
Procurement Notes
Verify the specific manufacturer documentation to confirm exact electrical parameters and pin configurations before integration. Ensure compatibility with the intended PCB footprint and thermal management strategy. Confirm that the component meets all relevant environmental directives required for your target market. Cross-reference datasheet revisions to ensure design stability.
Selection Notes
Select this component when high-voltage rectification is required in space-constrained designs. The SiC material offers lower switching losses than standard silicon diodes. Consider the 8x8mm package dimensions for mechanical fit. Evaluate thermal dissipation requirements based on the 6A current rating in your specific application environment.
Part Context
Bruckewell Technology Ltd. specializes in discrete semiconductor design, offering KGD wafer-level products for system-in-package solutions. The company focuses on mission-critical sectors including Electric Vehicles and AI. This diode is part of their broader portfolio aimed at delivering high-performance and reliable power solutions for advanced digital power applications.
Replacement Considerations
Bruckewell recommends using their own SiC Schottky diodes as substitutes or complementary components in PFC stages. Verify pinout compatibility and electrical ratings against existing designs before substitution. Consult official Bruckewell documentation for approved alternative part numbers within their product line.
