CBR10P65

Overview

The CBR10P65 is a Silicon Carbide (SiC) Schottky Diode manufactured by Bruckewell Technology Corporation. It features a maximum repetitive reverse voltage of 650 V and supports a maximum average forward rectified current of 29 A at a case temperature of 25°C, reducing to 10 A at 150°C. The device operates with a junction temperature range from -55°C to 175°C and exhibits a maximum junction-to-case thermal resistance of 1.5 °C/W. Electrical characteristics include an instantaneous forward voltage of up to 2.25 V at 10 A and 175°C, and a maximum reverse current of 250 μA at 175°C. The component is housed in a TO220-2L package.

Feature Summary

• Positive temperature coefficient ensures safe operation and facilitates ease of paralleling multiple units.
• Extremely fast switching performance that remains independent of temperature variations.
• Eliminates reverse and forward recovery charges, enhancing efficiency in high-frequency applications.
• Rated for avalanche energy capability to handle surge conditions.

Applications

• High frequency rectifier circuits in switching mode power supplies
• Freewheeling diodes in power conversion stages
• DC-to-DC converters
• Industrial motor drives
• Power factor correction modules

Procurement Notes

Verify the specific revision level, indicated as Rev. A dated 2021 in the source documentation, against your bill of materials. Confirm that the TO220-2L package dimensions align with your PCB footprint requirements. Ensure thermal management designs account for the specified junction-to-case thermal resistance of 1.5 °C/W to maintain operation within the 175°C maximum junction temperature limit under expected load conditions.

Selection Notes

Select this component for applications requiring high-temperature stability and fast switching speeds without recovery losses. The positive temperature coefficient is critical for parallel operation to ensure balanced current sharing. Consider the derating of forward current from 29 A at 25°C to 10 A at 150°C when designing thermal solutions for high-power environments.

Part Context

This SiC Schottky Diode belongs to Bruckewell's silicon carbide component lineup, designed to replace traditional silicon diodes in high-performance power electronics. The technology leverages wide-bandgap properties to achieve lower conduction losses and higher thermal tolerance compared to standard silicon counterparts, supporting modern efficient power conversion architectures.

Replacement Considerations

No public confirmed substitute part numbers are provided in the source material.

FAQ

Does the CBR10P65 exhibit reverse recovery charge?

No, the datasheet specifies that the device has no reverse or forward recovery.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175°C.