CC-C2-B15-0322

$5.95

Description：SiC Power MOSFET 1200V 12A
Series：-
Mfr：CoolCAD
Package：Bulk

SKU:5f1164f718fb Category: Single FETs, MOSFETs Brand: CoolCAD

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Product introduction

Product Detailed Parameters

Description：SiC Power MOSFET 1200V 12A
Series：-
Mfr：CoolCAD
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：135mOhm @ 10A, 15V
Vgs(th) (Max) @ Id：3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 15 V
Vgs (Max)：+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds：1810 pF @ 200 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-4

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CC-C2-B15-0322

Overview

The CoolCAD CC-C2-B15-0322 is a Silicon Carbide (SiC) Power MOSFET in a TO-247-3 package, rated for a maximum DC blocking voltage of 1200V. It features a typical drain-source on-resistance of 131mΩ at 25°C and supports a continuous drain current of 10A at 25°C. The device includes an integrated body diode with a forward voltage of 3V at 25°C. Key switching parameters include a turn-on energy of 37µJ and a turn-off energy of 6µJ under standard test conditions.

Feature Summary

Fabricated using high-quality SiC epitaxial layers with proprietary annealing procedures to ensure a high-quality gate oxide dielectric layer.
Optimized doping profile, neck region, and edge termination design to achieve extremely low on-resistance while maintaining high breakdown voltage.
Integrated body diode provides inherent reverse conduction capability suitable for hard-switching applications.

Applications

Electromechanical power converters
DC to DC, AC to DC, and DC to AC converters
Switching power supplies
Electric vehicles and hybrid vehicles
Solar and wind energy power converters

Procurement Notes

Verify the specific revision status against the manufacturer's latest documentation before finalizing designs. Confirm that the TO-247-3 pinout matches the target PCB footprint. Ensure thermal management solutions account for the junction-to-case thermal resistance of 1.5°C/W to maintain safe operating temperatures during operation.

Selection Notes

Select this component for applications requiring high-voltage blocking capabilities up to 1200V combined with low conduction losses. Evaluate the thermal performance based on the specified junction temperature limits and ambient conditions. Consider the switching energy values when designing gate drive circuits to optimize efficiency and minimize electromagnetic interference in the target system.

Part Context

This component belongs to the CoolCAD Gen-I series of Silicon Carbide Power MOSFETs. The series offers various breakdown voltages including 650V, 1200V, 1700V, and 3300V. These devices are designed to exceed the power, efficiency, and portability capabilities of standard silicon devices, utilizing advanced fabrication processes for superior performance.