CC-CN-23-0123

$5.95

Description：SiC MOSFET 20A 1200V TO-247-3
Series：-
Mfr：CoolCAD
Package：Bulk

SKU:b571876d02b6 Category: Single FETs, MOSFETs Brand: CoolCAD

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Product introduction

Product Detailed Parameters

Description：SiC MOSFET 20A 1200V TO-247-3
Series：-
Mfr：CoolCAD
Package：Bulk
FET Type：-
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：85mOhm @ 10A, 15V
Vgs(th) (Max) @ Id：2.4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：16 nC @ 5 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：810 pF @ 200 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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CC-CN-23-0123

Overview

The CoolCAD CC-CN-23-0123 is a Silicon Carbide (SiC) Power MOSFET in a TO-247-3 package. It features a maximum DC blocking voltage of 1200 V and a continuous drain current of 18 A at 25°C, dropping to 12 A at 175°C. The device exhibits a typical on-resistance of 83 mΩ at 25°C and 133 mΩ at 175°C. Key switching parameters include a turn-on energy of 16.6 µJ and turn-off energy of 4.8 µJ at 200 V and 10 A. The body diode has a forward voltage of 2.6 V at 3 A and 25°C.

Feature Summary

Fabricated using high-quality SiC epitaxial layers with proprietary annealing for robust gate oxide dielectric.
Optimized doping profile and edge termination ensure low on-resistance and high breakdown voltage.
Integrated body diode with fast reverse recovery characteristics suitable for synchronous rectification.

Applications

Electromechanical power converters
DC to DC, AC to DC, and DC to AC converters
Switching power supplies
Electric and hybrid vehicles
Solar and wind energy power converters

Procurement Notes

Verify the specific revision date against the manufacturer's official documentation before finalizing designs, as specifications may change without notice. Confirm that the TO-247-3 package dimensions match your PCB footprint requirements. Ensure proper ESD handling procedures are followed during assembly due to component sensitivity. Validate thermal performance under actual operating conditions rather than relying solely on datasheet ratings.

Selection Notes

Select this component for applications requiring high efficiency and reduced cooling needs compared to standard silicon devices. Consider the 1200 V rating for high-voltage systems and the 18 A continuous current capability at lower temperatures. Evaluate the thermal resistance of 1.5 °C/W for heat sink design. The low switching energy values support high-frequency operation in power conversion circuits.

Part Context

This part belongs to the CoolCAD Gen-I MOSFET family, which offers various breakdown voltages including 650V, 1200V, 1700V, and 3300V. These devices are designed to exceed the power and efficiency capabilities of standard silicon counterparts. The family utilizes a consistent fabrication process focusing on low leakage and high reliability through controlled annealing procedures.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Designers should consult the manufacturer for potential alternatives or cross-references if supply constraints arise.