CCB032M12FM3

Overview

The CCB032M12FM3 is a Wolfspeed WolfPACK silicon carbide six-pack power module featuring a 1200 V drain-source voltage and a typical on-resistance of 32 mΩ. It integrates six N-channel MOSFETs with press-fit pins for assembly, supporting a DC continuous drain current of 30 A at a heatsink temperature of 50 °C. The device operates within a virtual junction temperature range of -40 °C to 150 °C, with an intermittent limit of 175 °C. Key electrical characteristics include a gate threshold voltage of 2.5 V (typical) and a maximum transient gate-source voltage of +23 V. The module includes an integrated NTC thermistor rated at 5.0 kΩ and complies with UL STD 1557.

Feature Summary

• Fully SiC MOSFET-based architecture providing ultra-low switching and conduction losses
• Press-fit pin configuration designed for simplified mechanical assembly
• Zero turn-off tail current inherent to the MOSFET technology
• Integrated NTC thermistor for thermal monitoring

Applications

• DC-DC Converters
• High-Efficiency Converters and Inverters
• Renewable Energy Systems
• Smart-Grid and Grid-Tied Distributed Generation
• Electric Vehicle Chargers

Procurement Notes

Verify the specific ordering suffix when purchasing. The CCB032M12FM3 designation indicates the module without pre-applied phase change thermal interface material. The CCB032M12FM3T variant includes the pre-applied thermal interface material. Confirm that the selected version matches the thermal management strategy defined in the system design requirements before finalizing orders.

Selection Notes

Select this component based on the required 1200 V blocking capability and the 32 mΩ on-resistance target for low-loss operation. Ensure the application utilizes press-fit mounting hardware compatible with the specified M4 bolt torque of 2.0 to 2.3 N-m. Verify that the gate drive circuitry supports the recommended operational gate-source voltage of +15 V with ±5% regulation tolerance.

Part Context

This part belongs to the Wolfspeed WolfPACK family of silicon carbide power modules. It utilizes a standardized industry footprint designed to facilitate direct replacement or upgrade paths from legacy IGBT modules in existing power electronic designs. The six-pack topology allows for three-phase bridge configurations or multiple half-bridge setups within a single package.

Replacement Considerations

CCB032M12FM3T serves as the functional equivalent with pre-applied thermal interface material included.

FAQ

What is the difference between CCB032M12FM3 and CCB032M12FM3T?

The CCB032M12FM3 does not include pre-applied thermal interface material, whereas the CCB032M12FM3T comes with pre-applied phase change thermal interface material.

Is the CCB032M12FM3 suitable for linear mode operation?

No, the datasheet explicitly states that the device is not for use in the linear region.

What is the stray inductance value of the module?

The stray inductance between DC- and DC+ is typically 17.4 nH at a frequency of 10 MHz.