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Product Detailed Parameters
- Description：GANFET 40V 30A .004 OHM 4DAPT
- Series：-
- Mfr：EPC Space, LLC
- Package：Tray
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The CDA04N30X1C is a radiation-hardened gallium nitride (GaN) field-effect transistor manufactured by EPC Space, LLC. It features a 40V drain-source voltage rating and supports a continuous drain current of 30A. The device exhibits an ultra-low on-resistance of 0.004 ohms. Packaged in a 4DAPT configuration, this component is engineered for high-density applications requiring exceptional radiation immunity and high electron mobility within critical space environments.
Feature Summary
- Radiation-hardened design for high-reliability space missions
- Ultra-low on-resistance enabling high efficiency
- High electron mobility with low temperature coefficient
Applications
- Critical systems in commercial satellites
- Space environment power electronics
- High-density radiation-tolerant power stages
Procurement Notes
Verify the specific manufacturer lot and radiation hardness certification level against mission requirements. Confirm the 4DAPT package compatibility with your thermal management strategy. Ensure supply chain authorization through EPC Space or authorized distributors to guarantee component authenticity and traceability for space-grade hardware.
Selection Notes
Select this component when radiation tolerance is mandatory alongside high current density. The 40V rating suits low-voltage bus architectures. Evaluate the 0.004 ohm resistance for conduction loss optimization. Consider the 4DAPT footprint for board layout constraints compared to standard packages.
Part Context
This part belongs to the EPC Space rad-hard GaN discrete family designed for harsh environments. It complements other radiation-hardened transistors like the FBG04N30BSH, offering distinct packaging and performance characteristics tailored for satellite and deep-space power conversion systems requiring robustness against ionizing radiation.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Direct replacement requires matching radiation hardness levels and electrical parameters. Consult EPC Space engineering for qualified alternatives if pinout or performance deviations exist.
