CDA10N30X1C

$131.76

Description：GANFET 100V 30A .009 OHM 4DAPT
Series：-
Mfr：EPC Space, LLC
Package：Tray

SKU:6d7d62159ad8 Category: Single FETs, MOSFETs Brand: EPC Space, LLC

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：GANFET 100V 30A .009 OHM 4DAPT
Series：-
Mfr：EPC Space, LLC
Package：Tray
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Download product information

CDA10N30X1C

Overview

The CDA10N30X1C is a radiation-hardened enhancement-mode gallium nitride (GaN) power device from EPC Space. It features a 100V drain-source voltage rating, a 30A continuous current capacity, and a low on-resistance of 9 milliohms. The component utilizes a compact hermetic package designed for high-reliability applications in space environments. Key electrical characteristics include ultra-low gate charge to support high-efficiency switching and logic-level gate drive compatibility.

Feature Summary

Radiation-hardened design optimized for high-reliability space and satellite applications
Enhancement-mode GaN technology providing low on-resistance and high electron mobility
Compact hermetic packaging with source sense pin for precise control
Ultra-low gate charge enabling faster switching frequencies and higher efficiency

Applications

Power management systems for commercial satellites
High-reliability space environment power conversion
Rad-hard power supply switching stages

Procurement Notes

Verify the specific ordering suffix and revision level against official EPC Space documentation to ensure compliance with radiation hardness requirements. Confirm that the hermetic package type matches the thermal and mechanical constraints of the target application. Request test reports or qualification data directly from authorized distributors to validate authenticity and performance specifications prior to integration.

Selection Notes

Select this component when radiation tolerance and high reliability are critical for space-based power systems. The enhancement-mode operation simplifies driver design compared to depletion-mode alternatives. Ensure the system can accommodate the logic-level gate drive requirements while leveraging the low gate charge for optimal efficiency in high-frequency switching applications.

Part Context

EPC Space specializes in radiation-hardened GaN solutions for space applications. This part belongs to their portfolio of packaged discretes designed to replace traditional silicon devices in harsh environments. The technology leverages GaN's superior material properties to achieve lower resistance and higher power density than conventional semiconductors.