CDBGBSC20650-G

Diode Arrays Overview

The CDBGBSC20650-G is a dual silicon carbide power Schottky diode manufactured by Comchip Technology. It features a common cathode configuration housed in a TO-247-3 package for through-hole mounting. The device supports a maximum repetitive peak reverse voltage of 650 V and a DC forward current of 33 A. Key electrical characteristics include a low forward voltage drop typical of SiC technology, ensuring high efficiency. The component is designed for robust performance in demanding power conversion applications.

Diode Arrays Feature Summary

• Utilizes silicon carbide material for superior thermal conductivity and high-temperature operation capabilities compared to traditional silicon devices.
• Features a common cathode dual configuration within a single TO-247-3 package, simplifying circuit layout and reducing component count.
• Designed with low forward voltage characteristics inherent to Schottky barrier technology to minimize conduction losses.

Diode Arrays Applications

• High-efficiency DC-DC converters
• Uninterruptible power supplies (UPS)
• Solar inverters

Diode Arrays Procurement Notes

Verify the specific datasheet revision and pinout configuration before integration, as manufacturing updates may occur. Confirm that the TO-247-3 footprint matches the target PCB design. Ensure thermal management solutions are adequate for the 109 W power dissipation rating under actual operating conditions. Check for any recent supply chain notifications regarding lead times or availability changes from Comchip Technology.

Diode Arrays Selection Notes

Select this component when high-frequency switching and elevated temperature environments require the reliability of silicon carbide over silicon. The dual common cathode arrangement is suitable for synchronous rectification or bridge configurations where space savings are critical. Evaluate the 650 V reverse voltage rating against peak line voltages to ensure sufficient safety margins. Consider the thermal resistance of the TO-247-3 package for heat sink selection.

Diode Arrays Part Context

This part belongs to Comchip Technology's series of silicon carbide power Schottky diodes. These components are engineered to replace conventional silicon rectifiers in applications demanding higher efficiency and lower switching losses. The dual configuration allows for compact designs in power electronics where multiple diodes are required in close proximity.

Diode Arrays Replacement Considerations

Direct replacements must match the 650 V rating, 33 A current capacity, and TO-247-3 package. Verify that substitute parts maintain equivalent forward voltage characteristics and thermal performance. Cross-reference with other dual SiC Schottky diodes from various manufacturers if Comchip inventory is limited.