CDF7623-000

RF Diode Overview

The CDF7623-000 is a silicon Schottky barrier diode chip designed for applications through the X band. It features an N-type low barrier construction with planar passivated beam-lead and chip architecture. The device provides a reverse voltage rating of 2 V, a forward current capacity of 100 mA, and an RF input power handling capability of 75 mW at 25 °C. Electrical specifications include a typical video resistance range of 240 to 300 Ω, a maximum junction capacitance of 0.30 pF at 0 V bias, and a forward voltage of 240 mV at 1 mA. The SPICE model parameters define saturation current (IS) as 1.1E-07 A, series resistance (RS) as 5 Ω, and breakdown voltage (BV) as 2.5 V.

RF Diode Feature Summary

• N-type silicon substrate optimized for standard mixer and biased detector applications
• Planar passivated beam-lead and chip construction for close impedance control
• Large bond pad design to prevent mechanical damage during wire bonding
• Low series resistance and narrow capacitance spread for high reliability

RF Diode Applications

• Microwave integrated circuit (MIC) detectors
• X-band mixers
• High-speed switches
• Low-power limiters

RF Diode Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number against official Skyworks Solutions documentation. Confirm that the received hardware matches the specified N-type low barrier configuration and beam-lead package dimensions. Ensure proper electrostatic discharge handling protocols are followed during storage and assembly to maintain device integrity.

RF Diode Selection Notes

Select this specific N-type variant when designing low conversion loss mixers or biased detectors where standard material characteristics are preferred over the low-noise P-type options. Evaluate the 0.30 pF maximum capacitance and 240-300 Ω video resistance against the target X-band frequency requirements to ensure adequate impedance matching and signal fidelity.

RF Diode Part Context

This component belongs to the Skyworks silicon Schottky barrier diode family, which includes various P-type and N-type universal chips and beam-leads. These devices are engineered for microwave applications up to 40 GHz in the Ka band. The CDF7623-000 specifically addresses X-band needs using N-type material, distinguishing it from the P-type CDB7619/20 series optimized for low noise.

RF Diode Replacement Considerations

CDF7621-000 is a documented N-type alternative within the same datasheet family, offering different electrical characteristics such as higher video resistance and capacitance values.