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Product Detailed Parameters
- Description：MOSFET N-CH 650V 10A TO220
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1Ohm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：30V
- Input Capacitance (Ciss) (Max) @ Vds：1168 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The CDM22010-650 SL is a silicon N-channel power MOSFET manufactured by Central Semiconductor Corp. It features a TO-220 package and is rated for a continuous drain current of 10A with a breakdown voltage of 650V. The device exhibits an on-resistance of 0.88 Ohms and a gate charge of 8.0nC, supporting high-voltage fast switching applications.
Feature Summary
- N-channel silicon construction for high-voltage power switching
- High current capability suitable for demanding power circuits
- Fast switching characteristics optimized for efficiency
Applications
- Power Factor Correction (PFC) circuits
- High voltage DC-DC converters
- General purpose high voltage switching
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the specific suffix 'SL' matches project requirements as it may indicate packaging or tape-and-reel specifications. Check for obsolescence status before finalizing procurement plans.
Selection Notes
Select this component for designs requiring 650V blocking capability and 10A continuous current handling in a TO-220 form factor. Ensure thermal management solutions accommodate the 0.88 Ohm on-resistance losses at expected load currents.
Part Context
This part belongs to the Central Semiconductor N-channel power MOSFET family. It is designed for robust performance in industrial and consumer power electronics where high voltage isolation and moderate current capacity are required.
Replacement Considerations
The CDM22010-650 SL is listed as obsolete and no longer manufactured. Engineers should identify equivalent N-channel MOSFETs with matching 650V rating, 10A current, and TO-220 package from active product lines.
