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Product Detailed Parameters
- Description：MOSFET N-CH 600V 11A TO220FP
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：360mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23.05 nC @ 10 V
- Vgs (Max)：30V
- Input Capacitance (Ciss) (Max) @ Vds：763 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220FP
- Package / Case：TO-220-3 Full Pack
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Overview
The CDM22011-600LRFP is an N-channel LR Power MOSFET from Central Semiconductor Corp, housed in a TO-220FP case. It features a Drain-Source Voltage (VDS) of 600 V and a Continuous Drain Current (ID) of 11 A at TC=25°C. The device exhibits a typical rDS(ON) of 0.3 Ω at VGS=10V and ID=5.5A, with a maximum rating of 0.36 Ω. Gate charge (Qg) is typically 23.05 nC. Thermal resistance junction-to-case (θJC) is 5.0 °C/W, while junction-to-ambient (θJA) is 120 °C/W. Maximum power dissipation is 25 W. Operating and storage junction temperatures range from -55 to +150 °C.
Feature Summary
- UltraMOS technology combining high voltage capability with ultra-low on-resistance for optimal efficiency.
- Low gate charge characteristics designed for fast switching applications.
- High voltage capability suitable for demanding power electronics environments.
Applications
- Power Factor Correction
- Alternative energy inverters
- Solid State Lighting
Procurement Notes
Verify the specific ordering suffix when purchasing. The datasheet indicates that adding 'TIN/LEAD' requests Tin/Lead plating, while 'PBFREE' requests Lead-free plating. Confirm these requirements match your design specifications before placing orders to ensure compliance with material constraints.
Selection Notes
Select this component for designs requiring a 600V N-channel MOSFET with moderate current handling. The TO-220FP package provides robust thermal performance for steady-state operations. Evaluate the 0.3 Ω typical on-resistance against your conduction loss requirements and ensure the 25 W power dissipation rating fits your thermal management strategy.
Part Context
This part belongs to Central Semiconductor's UltraMOS family, engineered for high-voltage, fast-switching applications. The 'LR' designation likely refers to Low Resistance or a specific process variant within their portfolio. It serves as a discrete solution for power conversion stages where efficiency and switching speed are critical parameters.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternatives from other manufacturers.
FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is 44 A for a pulse width of 10μs.
How is the body diode characterized?
The continuous source current (body diode) is 11 A, with a maximum pulsed source current of 44 A. The forward voltage (VSD) is typically 0.92 V at IS=11A.
