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Product Detailed Parameters
- Description：MOSFET N-CH 600V 4A DPAK
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：950mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.59 nC @ 10 V
- Vgs (Max)：30V
- Input Capacitance (Ciss) (Max) @ Vds：328 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：38W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The CDM4-600LR TR13 PBFREE is an N-channel MOSFET manufactured by Central Semiconductor Corp. It features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 4 A at ambient temperature. The device utilizes a DPAK surface-mount package. Key electrical characteristics include a maximum gate-source voltage (Vgs) of 20 V and a power dissipation rating of 2.5 W at ambient temperature. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- High-voltage N-channel conduction capability for robust switching applications
- Surface-mount DPAK packaging optimized for automated assembly processes
- Wide operating junction temperature range supporting demanding thermal environments
Applications
- General-purpose high-voltage switching circuits
- Power management modules requiring compact form factors
- Industrial control systems utilizing surface-mount technologies
Procurement Notes
Verify the complete part number including the TR13 tape-and-reel suffix and Pb-free designation against official manufacturer documentation. Confirm that the specified DPAK package dimensions and pinout align with your PCB layout requirements. Ensure compliance with relevant environmental directives such as RoHS before finalizing procurement specifications.
Selection Notes
Select this component when a 600 V breakdown voltage and 4 A continuous current capacity are required in a small surface-mount footprint. Evaluate the thermal performance relative to the 2.5 W dissipation limit under expected load conditions. Compare the DPAK package constraints against available board space and soldering capabilities during the design phase.
Part Context
This component belongs to the Central Semiconductor discrete semiconductor portfolio, specifically within the MOSFET category. It represents a silicon-based N-channel enhancement mode field-effect transistor designed for general-purpose power switching applications. The product line emphasizes reliability and standard industrial specifications.
Replacement Considerations
Consult official manufacturer substitution guides or cross-reference databases for verified equivalent part numbers. Ensure any alternative device matches the 600 V rating, 4 A current capacity, and DPAK package outline to maintain mechanical and electrical compatibility.
