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Product Detailed Parameters
- Description：18A 200V THROUGH HOLE MOSFET
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- FET Type：N-Channel
- Technology：SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：18V
- Rds On (Max) @ Id, Vgs：150mOhm @ 18A, 18V
- Vgs(th) (Max) @ Id：4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：55 nC @ 15 V
- Vgs (Max)：20V
- Input Capacitance (Ciss) (Max) @ Vds：1365 pF @ 200 V
- FET Feature：-
- Power Dissipation (Max)：28W (Tj)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
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Overview
The CDMS24783-120 SL PBFREE is an N-channel silicon carbide MOSFET in a TO-247 case. It features a drain-source voltage of 1200 V and a continuous drain current of 18 A at 25°C. The device has a maximum power dissipation of 28 W and operates within a junction temperature range of -55 to +175 °C. Electrical characteristics include a gate-source threshold voltage of 1.0 to 4.0 V, a total gate charge of 55 nC, and a typical on-resistance of 150 mΩ at VGS=18V and ID=18A.
Feature Summary
- Designed for high-speed switching applications utilizing silicon carbide technology
- Features fast reverse recovery capabilities suitable for demanding power conversion environments
Applications
- High speed switching circuits
- Fast reverse recovery applications
Procurement Notes
Verify the specific ordering suffix 'SL' against official Central Semiconductor documentation to confirm its exact meaning, as datasheets primarily reference 'PBFREE' or 'TIN/LEAD' plating options. Ensure the component matches the TO-247 mechanical outline and marking code 'CDMS247 83-120'. Confirm RoHS compliance status through manufacturer declarations rather than assuming based on standard suffixes alone.
Selection Notes
Select this component when designing systems requiring a 1200 V rated silicon carbide MOSFET with a 18 A continuous current capacity. Consider the thermal constraints associated with a 28 W power dissipation rating in the TO-247 package. Evaluate the 150 mΩ on-resistance and 55 nC gate charge parameters for efficiency and drive requirements in high-frequency switching topologies.
Part Context
This part belongs to the Central Semiconductor CDMS247 series of silicon carbide MOSFETs. These devices are engineered to replace traditional silicon counterparts in high-voltage applications, offering superior performance in terms of switching speed and thermal stability due to the wide bandgap properties of silicon carbide.
Replacement Considerations
Consult official cross-reference lists from Central Semiconductor for verified substitutes. Do not assume compatibility with other manufacturers' 1200 V SiC MOSFETs without verifying pinout, electrical limits, and thermal resistance specifications.
